FSS218 Sanyo Semiconductor Corporation, FSS218 Datasheet - Page 2

• Manufacturer Part Number: FSS218
• Description: N-channel Silicon Mosfet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm
7005-002
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
0.595
80
70
60
50
40
30
20
10
8
7
6
5
4
3
2
1
0
0
1
8
0
2
1.27
I D =8A
Parameter
5.0
3
0.2
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
5
4A
4
4
0.43
R DS (on) -- V GS
5
I D -- V DS
0.4
6
0.6
0.2
Symbol
7
V SD
Qgs
Qgd
Qg
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
8
0.8
V DS =10V, V GS =10V, I D =8A
V DS =10V, V GS =10V, I D =8A
V DS =10V, V GS =10V, I D =8A
I S =8A, V GS =0V
Ta=25 C
9
IT10720
IT10722
FSS218
1.0
10
Conditions
Switching Time Test Circuit
15
14
13
12
10
80
70
60
50
40
30
20
10
11
9
8
7
6
5
4
3
2
1
0
0
--60
0
V DS =10V
10V
P.G
--40
0V
PW=10 s
D.C. 1%
0.4
V IN
--20
0.8
Gate-to-Source Voltage, V GS -- V
Ambient Temperature, Ta -- C
0
V IN
min
1.2
R DS (on) -- Ta
50
G
20
I D -- V GS
1.6
40
Ratings
2.0
typ
V DD =15V
0.85
D
60
3.3
3.5
19
2.4
S
I D =8A
R L =1.875
80
max
2.8
FSS218
100
1.2
V OUT
No. A0189-2/4
3.2
120
Unit
3.6
nC
nC
nC
140
IT10721
IT10723
V
160
4.0