FSS218 Sanyo Semiconductor Corporation, FSS218 Datasheet
FSS218
Manufacturer Part Number
FSS218
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.FSS218.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FSS218-TL-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : ENA0189A
FSS218
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : S218
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW 10s)
Drain Current (PW 10 s)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
•
•
•
Motor drive applications.
Inverter drive applications.
4V drive.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V DSS
V GSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
I D
t r
t f
SANYO Semiconductors
Duty cycle 1%
Duty cycle 1%
Mounted on a ceramic board (2000mm
I D =1mA, V GS =0V
V DS =35V, V GS =0V
V GS = 16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =8A
I D =8A, V GS =10V
I D =4A, V GS =4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
FSS218
Conditions
Conditions
71206 / 40506 MS IM / 22406PA MS IM TB-00002038
2
0.8mm), PW 10s
DATA SHEET
min
1.5
5.4
35
Ratings
typ
1050
Ratings
200
140
20
38
17
65
75
45
9
Continued on next page.
--55 to +150
max
150
8.5
1.8
35
32
20
2.5
26
54
No. A0189-1/4
10
8
1
Unit
Unit
m
m
pF
pF
pF
ns
ns
ns
ns
W
V
V
A
A
A
V
V
S
C
C
A
A
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FSS218 Summary of contents
Page 1
... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN FSS218 SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device ...
Page 2
... IT10722 Ratings min typ max 19 3.3 3.5 0. =15V V IN 10V =1.875 PW= P.G 50 FSS218 =10V 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Gate-to-Source Voltage (on --60 --40 -- ...
Page 3
... Total Gate Charge 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature FSS218 =10V 0.001 0.3 10 IT10724 =15V V GS =10V 2 1000 ...
Page 4
... Note on usage : Since the FSS218 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...