FSS173 Sanyo Semiconductor Corporation, FSS173 Datasheet - Page 2

• Manufacturer Part Number: FSS173
• Description: P-channel Silicon Mosfet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7005-002
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
0.595
--6
--5
--4
--3
--2
--1
0
0
1
8
1.27
Parameter
5.0
--0.2
Drain-to-Source Voltage, V DS -- V
5
4
0.43
--0.4
I D -- V DS
--0.6
Symbol
0.2
t d (on)
t d (off)
V SD
Qgs
Qgd
Qg
t r
t f
--0.8
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
V DS =--24V, V GS =- -10V, I D =--6A
V DS =--24V, V GS =- -10V, I D =--6A
V DS =--24V, V GS =- -10V, I D =--6A
I S =--6A, V GS =0V
IT11339
--1.0
FSS173
Conditions
--12
--10
--8
--6
--4
--2
0
Switching Time Test Circuit
0
V DS = --10V
--10V
--0.4
P.G
0V
PW=10 s
D.C. 1%
--0.8
V IN
Gate-to-Source Voltage, V GS -- V
--1.2 --1.6
min
V IN
I D -- V GS
50
G
--2.0
Ratings
typ
--0.82
V DD = --24V
--2.4 --2.8
210
30
48
95
46
D
7
8
S
I D = --6A
R L =4
FSS173
max
--1.5
--3.2
No. A0480-2/4
V OUT
--3.6
IT11340
Unit
nC
nC
nC
ns
ns
ns
ns
V
--4.0