FSS173 Sanyo Semiconductor Corporation, FSS173 Datasheet

FSS173

Manufacturer Part Number

FSS173

Description

P-channel Silicon Mosfet

Manufacturer

Sanyo Semiconductor Corporation

Datasheet

1.FSS173.pdf (4 pages)

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Ordering number : ENA0480

FSS173

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : S173

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (PW 10s)

Drain Current (PW 10 s)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

•

Low ON-resistance.

4V drive.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V (BR)DSS

R DS (on)1

R DS (on)2

V GS (off)

Symbol

V GSS

V DSS

I GSS

I DSS

Coss

Ciss

Crss

Tstg

I DP

Tch

P D

yfs

I D

SANYO Semiconductors

Duty cycle 1%

Mounted on a ceramic board (1200mm

I D =--1mA, V GS =0V

V DS =- -45V, V GS =0V

V GS = 16V, V DS =0V

V DS =- -10V, I D =--1mA

V DS =- -10V, I D =- -6A

I D =--6A, V GS =- -10V

I D =--3A, V GS =- -4V

V DS =- -20V, f=1MHz

FSS173

Conditions

0.8mm), PW 10s

DATA SHEET

73106PA MS TB-00002429

min

--1.2

--45

7.2

Ratings

typ

2580

Ratings

265

210

Continued on next page.

--55 to +150

max

150

--2.6

--45

--24

2.4

--6

--7

No. A0480-1/4

--1

Unit

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FSS173 Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN FSS173 SANYO Semiconductors Symbol Conditions ...

... --10V --10 --8 --6 --4 --2 0 --0.8 --1.0 0 IT11339 Ratings min typ max 30 48 210 --0.82 --1 --24V 0V --10V -- OUT PW= FSS173 P --0.4 --0.8 --1.2 --1.6 --2.0 --2.4 --2.8 --3.2 Gate-to-Source Voltage No. A0480-2/4 Unit --4.0 --3.6 IT11340 ...

Page 3

... Drain Current -- --10V -- --6A --8 --7 --6 --5 --4 --3 --2 -- Total Gate Charge FSS173 80 Ta= --8 --9 --10 --60 --40 IT11341 2 -- --1 --0 --0.01 ...

Page 4

... Ambient Temperature Note on usage : Since the FSS173 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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FSS173 Sanyo Semiconductor Corporation, FSS173 Datasheet

FSS173

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FSS173 Summary of contents

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