HN29W12811 Renesas Electronics Corporation., HN29W12811 Datasheet - Page 18

• Manufacturer Part Number: HN29W12811
• Description: 128m And Type Flash Memory More Than 8,029-sector 135,657,984-bit
• Manufacturer: Renesas Electronics Corporation.

HN29W12811 Series
DC Characteristics (V
Parameter
Input leakage current
Output leakage current
Standby V
Deep standby V
Operating V
Operating V
Operating V
Input voltage
Input voltage (RES pin)
Output voltage
Notes: 1. V
AC Characteristics (V
Test Conditions
18
Input pulse levels: 0.4 V/2.4 V
Input pulse levels for RES: 0.2 V/V
Input rise and fall time: 5 ns
Output load: 1 TTL gate + 100 pF (Including scope and jig.)
Reference levels for measuring timing: 0.8 V, 1.8 V
2. V
3. V
CC
ns in the read operation.
operations are not guaranteed.
CC
CC
CC
current
IL
IL
IH
current
current (Program) I
current (Erase)
min = –1.0 V for pulse width
min = –0.6 V for pulse width
max = V
CC
current
CC
+ 1.5 V for pulse width
CC
CC
= 3.3 V ± 0.3 V, Ta = 0 to +70˚C)
= 3.3 V ± 0.3 V, Ta = 0 to +70˚C)
Symbol Min
I
I
I
I
I
I
I
I
V
V
V
V
V
V
LI
LO
SB1
SB2
SB3
CC1
CC2
CC3
CC4
IL
IH
ILR
IHR
OL
OH
CC
– 0.2 V
—
—
—
—
—
—
—
—
—
–0.3*
2.0
–0.2
V
—
2.4
CC
50 ns in the read operation. V
20 ns in the erase/data programming operation.
– 0.2 —
1, 2
20 ns. If V
Typ
—
—
0.3
30
1
5
20
20
20
—
—
—
—
—
IH
Max
2
2
1
50
5
20
40
40
40
0.8
V
0.2
V
0.4
—
is over the specified maximum value, the
CC
CC
+ 0.3*
+ 0.2
3
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
IL
A
A
A
A
min = –2.0 V for pulse width
Test conditions
Vin = V
Vout = V
CE = V
CE = V
RES = V
RES = V
Iout = 0 mA, f = 0.2 MHz
Iout = 0 mA, f = 20 MHz
In programming
In erase
I
I
OL
OH
= 2 mA
= –2 mA
SS
IH
CC
SS
CC
SS
to V
to V
0.2 V,
0.2 V
0.2 V
CC
CC
20