HN29W12811 Renesas Electronics Corporation., HN29W12811 Datasheet
HN29W12811
Related parts for HN29W12811
HN29W12811 Summary of contents
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... V power supply. The functions are controlled by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small as (2048 + 64) bytes. Initial available sectors of HN29W12811 are more than 8,029 (98% of all sector address). ...
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... HN29W12811 Series Erase mode Single sector erase ((2048 + 64) byte unit) Fast serial read access time: First access time: 50 µs (max) Serial access time (max) Low power dissipation (max) (Read) CC2 µA (max) (Standby) SB2 (max) (Erase/Program) ...
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... RDY/Busy RES SC Note: 1. All V and V pins should be connected to a common power supply and a ground, respectively HN29W12811 Series 48-pin TSOP (Top view) Function Input/output Chip enable Output enable Write enable Command data enable Power supply Ground Ready/Busy Reset Serial clock ...
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... HN29W12811 Series Block Diagram Sector address buffer • • I/O0 • • to Multiplexer • • I/O7 • • RDY/Busy Read/Program/Erase control Control WE signal SC buffer RES CDE 4 2048 + 64 X-decoder 8192 (2048 + 64) memory matrix Data register (2048 + 64) Data Input • • Y-gating ...
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... Control bytes I/O0 I/O1 I/O2 I/O3 I/ A10 A11 A12 A10 A11 HN29W12811 Series Column address I/O5 I/O6 I/ referred ...
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... HN29W12811 Series Pin Function CE used to select the device. The status returns to the standby at the rising edge the reading operation. However, the status does not return to the standby at the rising edge the busy state in programming and erase operation. OE: Memory data and status register data can be read, when WE: Commands and address are latched at the rising edge of WE ...
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... Write 1FH 7 4 Write 0FH Write 11H 2h* Write 11H 1 Write FFH 1 Write 50H 4 Write 12H HN29W12811 Series Second bus cycle Operation Data in Data out mode 4 Write SA (1)* 4 Write SA (1)* 4 Write SA (1 Read ID* Read Recovery data 4 Write SA (1)* 4 ...
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... HN29W12811 Series Command Read Serial read (1) (Without CA) 3 (With CA) Serial read (2) Read identifier codes Data recovery read Auto erase Single sector Auto program Program (1) (Without 7 CA* ) (With CA* 10 Program (2)* Program (3) (Control bytes)* Program (4) (WithoutCA* (With CA* Reset Clear status register Data recovery write ...
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... Write CA (2 2h* Write CA (2 2h* Write CA ( IHR HN29W12811 Series Sixth bus cycle Operation Data in mode *11, 12 Write 40H *11, 12 Write 40H first time after the power up. h 2048 + 64). 9 ...
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... HN29W12811 Series Mode Description Read Serial Read (1): Memory data D0 to D2111 in the sector of address SA is sequentially read. Output data is not valid after the number of the SC pulse exceeds 2112. When CA is input, memory data D ( the sector of address SA is sequentially read. Then output data is not valid after the number of the SC pulse exceeds (2112 to m) ...
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... CDE V 8191 Sector Sector address address Memory array 0 0 2111 Column address Register Serial read (1) (With CA) Program (1) (With CA) and V , respectively HN29W12811 Series 8191 Memory array 0 0 2048 2111 Register Serial read (2) Program ( the status IL 11 ...
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... HN29W12811 Series Data Recovery Read When the programming was an error, the program data can be read by using data recovery read. When an additional programming was an error, the data compounded of the program data and the origin data in the sector address SA can be read. Output data are not valid after the number of SA pulse exeeds 2112. The mode turns back to the standby mode at any time when are latched at a rising edge of WE pulse after the data recovery read command is written ...
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... Serial Read (1) (Without CA), (2) Command/Address 00H/F0H CDE WE Low SC Single Sector Erase Command/Address CDE (1) CA (2) Data output CA (1) CA (2) Data output SA (1) SA (2) 20H SA (1) SA (2) Low HN29W12811 Series CA (1)' CA (2)' Data output CA (1)' CA (2)' Data output Data output B0H Erase start 13 ...
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... HN29W12811 Series Program (1), (4) (With CA before SC) Command 10H/11H SA (1) SA (2) /Address CDE WE Low SC Program (1), (4) (With CA after SC) Command 10H/11H SA (1) SA (2) /Address CDE WE Low SC Data input Program (1), (4) (Without CA) Command/Address 10H/11H CDE WE SC Low Program (2) Command/Address 1FH CDE WE SC Low 14 CA (1) ...
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... Data Recovery Read Mode Command/Address Data Recovery Write Mode Command/Address CDE (1) SA (2) Data input 90H Manufacture Device code code output output 01H CDE WE SC Low Data output 12H SA (1) SA (2) Low HN29W12811 Series 40H Program start Manufacture code output 40H Program start 15 ...
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... HN29W12811 Series Status Transition V Deep CC Power off standby RES 00H/F0H Read (1) / (2) setup FFH CE 90H ID read setup FFH CE 20H Sector Erase setup FFH 10H CE Output /11H Program Standby disable (1)/(4) setup FFH 1FH /0FH Program (2)/(3) setup FFH Status register clear ...
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... Vin, Vout –0 Topr 0 to +70 Tstg –65 to +125 Tbias –10 to +80 20 ns. Symbol Min Typ Max Unit Cin — — Cout — — HN29W12811 Series Unit Notes 0 ˚C ˚C 3 ˚C Test conditions Vin = 0 V Vout = ...
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... HN29W12811 Series DC Characteristics (V = 3.3 V ± 0 +70˚C) CC Parameter Symbol Min Input leakage current I LI Output leakage current I LO Standby V current I CC SB1 I SB2 Deep standby V current I CC SB3 Operating V current I CC CC1 I CC2 Operating V current (Program CC3 Operating V current (Erase) ...
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... SCS 0 — — ns CDS 20 — — ns CDH 1 — — s VRS 1 — — s VRH 1 — — s CESR 0 — — ns DFP HN29W12811 Series Test conditions Notes ...
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... HN29W12811 Series Parameter Symbol RES high to device ready t CE pulse high time t CE, WE setup time for RES t RES to CE, WE hold time t SC setup for hold time for ( (2) delay time t RDY/Busy setup for SC t Time to device busy on read mode t ...
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... ASP t 50 — — WSD t 2 — — WSDR t 200 — — ns CPH t 25 — — — — ns SPL t 0 — — ns SDS t 35 — — ns SDH t 50 — — HN29W12811 Series Test conditions Note CDE = ...
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... HN29W12811 Series Parameter SC setup for CE SC hold time for output delay OE to output delay OE high to output float RES to CE setup time CDE setup time for WE CDE hold time for WE CDE setup time for SC CDE hold time for SC Next cycle ready time ...
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... Undefined CEH CESR RP CES BSY Ready High-Z level referred to DC characteristics at the rising and falling edges of V level referred to DC characteristics while I/O7 outputs the V level. OL HN29W12811 Series t t CEH CESR t CWRH t t VRH DFP level in the OL 23 ...
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... HN29W12811 Series Serial Read (1) (2) Timing Waveform CE t CES CWC CWC WPH WPH OEWS WE t CDS CDS CDE t CDH SCS I/O0 to I/O7 00H SA(1) SA(2) /F0H RES DBR RDY /Busy Notes: 1. The status returns to the standby at the rising edge of CE. ...
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... CEH CWC OEPS t WPH CDS t CDH t t CDH SCHW IO7 = V SA(2) B0H HN29W12811 Series COH t 4 CPH * t CEH t t CDH SOH SCC * t CDS SAC SAC SAC ...
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... HN29W12811 Series Program (1) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t t WPH WPH CDS WP CDS WP WP CDE t CDH SCS I/O0 to I/O7 10H SA (1) SA (2) RES t High-Z RP RDY /Busy Notes: 1 ...
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... CDSH CDH * SPL t SPL SDH SDH SDS 1 PD1 CA(1) CA(2) PD(m) PD(m+1) PD(m+j)* PD(k 2048 + 64) HN29W12811 Series t t CEH OEPS OE t RDY CDS WP ASP SCC CDH SPL SCHW SDH ...
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... HN29W12811 Series Program (2) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t t WPH WPH CDS WP CDS WP WP CDE t CDH SCS I/O0 to I/O7 1FH SA (1) SA (2) RES t High-Z RP RDY /Busy Notes: 1 ...
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... CEH t OEPS t t CDSS SCC CDH CDH t t SCHW SPL SDH SDS PD2048 PD2049 PD2111 40H HN29W12811 Series RDY OE t ASP CDS I/ I/ High ...
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... HN29W12811 Series Program (4) and Status Data Polling Timing Waveform CE t CES OEWS CWC CWC t t WPH WPH CDS CDS WP WP CDE t CDH SCS I/O0 to I/O7 11H SA (1) SA (2) RES t DBR t RP RDY /Busy Notes: 1 ...
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... CDSH CDH * SPL t SPL SDH SDH SDS 1 PD1 CA(1) CA(2) PD(m) PD(m+1) PD(m+j)* PD(k High 2048 + 64) HN29W12811 Series t t CEH OEPS OE t RDY CDS WP ASP CDH SCC SPL SCHW ...
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... HN29W12811 Series ID and Status Register Read Timing Waveform CE t CES OEWS OEPS CDH CDS WP CDE t SCHW SCS DS OE I/O0 to I/O7 Manufacturer 90H code RES t RP RDY /Busy Note: 1. The status returns to the standby at the rising edge of CE. ...
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... After any commands are written, the status can turns to the standby after the command FFH is input and CE turns to the V level CPH t COH t CWHR CDOS SOH SCC SCC SPL SAC SAC SAC SAC D0out D1out D2111out High High-Z HN29W12811 Series CEH CDH t CDS FFH * 33 ...
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... HN29W12811 Series Data Recovery Write Timing Waveform CE t CES CWC CWC WPH WPH OEWS WE t CDS CDS CDE t CDH SCS DS AS I/O0 to I/O7 12H SA(1) High RES High-Z RDY /Busy Notes: 1. Any commands,including reset command FFH, cannot be input while RDY/Busy ...
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... DH I/O0 to I/O7 50H RES High High-Z RDY /Busy Note 1. The status returns to the standby at the rising edge of CE. t CWH t WWH t CDS t CDH Next Command HN29W12811 Series CPH t CES t OEWS t CDS t t CDH WP t SCS tDS tDH Next Command 35 ...
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... HN29W12811 Series Function Description Status Register: The HN29W12811 outputs the operation status data as follows: I/O7 pin outputs a V indicate that the memory is in either erase or program operation. The level of I/O7 pin turns the operation finishes. I/O5 and I/O4 pins output V complete in a finite time, respectively. If these pins output V out ...
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... Unusable Sector Initially, the HN29W12811 includes unusable sectors. The unusable sectors must be distinguished from the usable sectors by the system as follows. 1. Check the partial invalid sectors in the devices on the system. The usable sectors were programmed the following data. Refer to the flowchart “The Unusable Sector Indication Flow”. ...
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... HN29W12811 Series Requirements for High System Reliability The device may fail during a program, erase or read operation due to write or erase cycles. The following architecture will enable high system reliability if a failure occurs. 1. For an error in read operation: An error correction more than 1-bit error correction per each sector read is required for data reliability ...
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... Check status Yes Clear status register Load data from external buffer Check status: Status register read END Spare Sector Replacement Flow after Program Error HN29W12811 Series Data recovery read Data recovery write Set another Program start usable sector Program end Check RDY/Busy ...
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... HN29W12811 Series Memory Structure 2,112 bytes (16,896 bits) Bit: Minimum unit of data. Byte: Input/output data unit in programming and reading. (1 byte = 8 bits) Sector: Page unit in erase, programming and reading. (1 sector = 2,112 bytes = 16,896 bits) Device: 1 device = 8,192 sectors. 40 bit sector byte (8 bits) ...
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... Package Dimensions HN29W12811T Series (TFP-48DA) 12.00 12.40 Max 0.50 *0.22 0.08 0.08 M 0.20 0.06 0.45 Max 0.10 *Dimension including the plating thickness Base material dimension 25 20.00 0.20 Hitachi Code JEDEC EIAJ Mass (reference value) HN29W12811 Series Unit: mm 0.80 0 – 5 0.50 0.10 TFP-48DA Conforms Conforms 0. ...
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... HN29W12811 Series Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document ...