HN29W12811 Renesas Electronics Corporation., HN29W12811 Datasheet - Page 17

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HN29W12811

Manufacturer Part Number
HN29W12811
Description
128m And Type Flash Memory More Than 8,029-sector 135,657,984-bit
Manufacturer
Renesas Electronics Corporation.
Datasheet
Absolute Maximum Ratings
Parameter
V
V
All input and output voltages
Operating temperature range
Storage temperature range
Storage temperature under bias
Notes: 1. Relative to V
Capacitance (Ta = 25˚C, f = 1 MHz)
Parameter
Input capacitance
Output capacitance
CC
SS
voltage
voltage
2. Vin, Vout = –2.0 V for pulse width
3. Device storage temperature range before programming.
SS
.
Symbol
Cin
Cout
20 ns.
Symbol
V
V
Vin, Vout
Topr
Tstg
Tbias
CC
SS
Min
Typ
Value
–0.6 to +4.6
0
–0.6 to V
0 to +70
–65 to +125
–10 to +80
Max
6
12
CC
Unit
pF
pF
+ 0.3
HN29W12811 Series
Test conditions
Vin = 0 V
Vout = 0 V
Unit
V
V
V
˚C
˚C
˚C
Notes
1
1, 2
3
17

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