BYQ30E NXP Semiconductors, BYQ30E Datasheet - Page 4

• Manufacturer Part Number: BYQ30E
• Description: Byq30e, Byq30eb, Byq30ed Series Rectifier Diodes Ultrafast, Rugged
• Manufacturer: NXP Semiconductors

Philips Semiconductors
October 1998
Rectifier diodes
ultrafast, rugged
Fig.9. Typical and maximum forward characteristic
1000
0.01
20
15
10
Fig.8. Maximum I
100
Fig.7. Maximum t
5
0
0.1
10
10
0
1
1
Forward current, IF (A)
Tj = 25 C
Tj = 150 C
1
1
trr / ns
Irrm / A
I
F
0.5
= f(V
Forward voltage, VF (V)
typ
F
rrm
); parameter T
rr
dIF/dt (A/us)
-dIF/dt (A/us)
IF=1A
at T
at T
10
10
1
j
j
= 25 ˚C; per diode
IF=10A
IF=10A
= 25 ˚C; per diode
max
1.5
j
IF=1A
BYQ30
100
100
2
4
BYQ30E, BYQ30EB, BYQ30ED series
Fig.11. Transient thermal impedance; per diode;
Fig.10. Maximum Q
0.001
100
1.0
0.01
10
0.1
10
1.0
1
1us
Qs / nC
Transient thermal impedance, Zth j-mb (K/W)
10us
100us
Z
pulse width, tp (s)
th j-mb
IF=10A
-dIF/dt (A/us)
1ms
2A
1A
5A
s
at T
= f(t
10
P
D
10ms 100ms
j
p
= 25 ˚C; per diode
).
t
p
Product specification
T
D =
BYQ30E
T
t
p
t
1s
Rev 1.200
100
10s