BYQ30E NXP Semiconductors, BYQ30E Datasheet - Page 3

• Manufacturer Part Number: BYQ30E
• Description: Byq30e, Byq30eb, Byq30ed Series Rectifier Diodes Ultrafast, Rugged
• Manufacturer: NXP Semiconductors

Philips Semiconductors
October 1998
Rectifier diodes
ultrafast, rugged
Fig.3. Maximum forward dissipation P
I
I
12
10
R
V F
F
8
6
4
2
0
I
F
0
Forward dissipation, PF (W)
Vo = 0.75 V
Rs = 0.025 Ohms
diode; square current waveform where
Fig.1. Definition of t
2
Average forward current, IF(AV) (A)
I
rrm
Fig.2. Definition of V
0.1
dI
dt
I
Q
F(AV)
4
F
s
=I
0.2
F(RMS)
BYQ30
6
t
rr
x D.
rr1
I
, Q
8
s
0.5
t
p
and I
fr
T
V F
D = 1.0
Tmb(max) / C
F
= f(I
10%
10
D =
rrm
time
time
T
t
p
F(AV)
t
time
100%
) per
12
V
114
120
126
132
138
144
150
fr
3
BYQ30E, BYQ30EB, BYQ30ED series
Fig.6. Maximum forward dissipation P
diode; sinusoidal current waveform where a = form
12
10
8
6
4
2
0
0
Forward dissipation, PF (W)
0A
Rs 0.025 Ohms
0.5A
IF
IR
Vo = 0.75 V
Voltage Pulse Source
1
Fig.4. Circuit schematic for t
I
rec
Average forward current, IF(AV) (A)
2
Fig.5. Definition of t
factor = I
= 0.25A
4
3
R
F(RMS)
I = 1A
R
BYQ30
4
Current
shunt
2.8
/ I
5
F(AV)
2.2
Product specification
D.U.T.
trr2
rr2
.
6
1.9
Tmb(max) / C
F
rr2
to ’scope
= f(I
a = 1.57
7
F(AV)
Rev 1.200
) per
8
114
120
126
132
138
144
150