ZXMN10A08DN8 Zetex Semiconductors plc., ZXMN10A08DN8 Datasheet - Page 4

• Manufacturer Part Number: ZXMN10A08DN8
• Description: 100v N-channel Enhancement Mode Mosfet
• Manufacturer: Zetex Semiconductors plc.

ELECTRICAL CHARACTERISTICS
NOTES:
(1) Measured under pulsed conditions. Width = 300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMN10A08DN8
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state resistance
Forward transconductance
DYNAMIC
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate charge
Total gate charge
Gate-source charge
Gate-drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
Reverse recovery time
Reverse recovery charge
S E M I C O N D U C T O R S
(3)
(2) (3)
(1)
(3)
(3)
(1)(3)
(at T
(1)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
g
gs
gd
rr
A
= 25°C unless otherwise stated).
4
MIN.
100
2.0
TYP.
28.2
14.2
0.87
405
5.0
3.4
2.2
3.2
4.2
7.7
1.8
2.1
27
32
8
MAX. UNIT CONDITIONS.
0.25
0.30
0.95
100
0.5
nA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
ISSUE 4 - JANUARY 2005
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
V
I
T
V
T
di/dt= 100A/ s
D
D
D
D
J
J
DS
GS
GS
GS
DS
DS
DD
G
DS
DS
GS
=1.2A
=1.2A
=250 A, V
=250 A, V
=25°C, I
=25°C, I
≅6.0 , V
=100V, V
=15V,I
=50 V, V
=50V,V
=50V,V
= 20V, V
=10V, I
=6V, I
=0V
=30V, I
D
D
S
F
D
GS
GS
=2.6A
=1.2A,
GS
=3.2A,
=3.2A
D
=3.2A
GS
GS
DS
GS
=1.2A
DS
=5V,
=10V,
=10V
= V
=0V,
=0V
=0V
=0V
GS