ZXMN10A08DN8 Zetex Semiconductors plc., ZXMN10A08DN8 Datasheet - Page 2

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ZXMN10A08DN8

Manufacturer Part Number
ZXMN10A08DN8
Description
100v N-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN10A08DN8
Manufacturer:
ZETEX
Quantity:
20 000
Part Number:
ZXMN10A08DN8TC
Manufacturer:
DIODES
Quantity:
16 500
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
ZXMN10A08DN8
PARAMETER
Drain-source voltage
Gate source voltage
Continuous drain current V
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
PARAMETER
Junction to ambient (a)
Junction to ambient (b)
S E M I C O N D U C T O R S
(c)
A
A
=25°C
=25°C
V
V
GS
GS
GS
(a)
(b)
=10V; T
=10V; T
=10V; T
(c)
A
A
A
=25°C
=70°C
=25°C
(b)
(b)
(a)
(b)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
:T
θJA
θJA
stg
-55 to +150
VALUE
LIMIT
1.25
14.5
100
100
2.1
1.7
1.6
2.6
1.8
69
10
9
9
20
ISSUE 4 - JANUARY 2005
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
W
W
°C
V
V
A
A
A
A

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