ZXMN10A08DN8 Zetex Semiconductors plc., ZXMN10A08DN8 Datasheet

no-image

ZXMN10A08DN8

Manufacturer Part Number
ZXMN10A08DN8
Description
100v N-channel Enhancement Mode Mosfet
Manufacturer
Zetex Semiconductors plc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN10A08DN8
Manufacturer:
ZETEX
Quantity:
20 000
Part Number:
ZXMN10A08DN8TC
Manufacturer:
DIODES
Quantity:
16 500
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 4 - JANUARY 2005
DEVICE
ZXMN10A08DN8TA
ZXMN10A08DN8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC converters
Power management functions
Disconnect switches
Motor control
ZXMN
10A08D
= 100V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.25
WIDTH
12mm
12mm
TAPE
I
D
QUANTITY
2,500 units
PER REEL
500 units
= 2.1A
1
ZXMN10A08DN8
S E M I C O N D U C T O R S
PINOUT
Top View

Related parts for ZXMN10A08DN8

ZXMN10A08DN8 Summary of contents

Page 1

... Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN10A08DN8TA 7” 12mm ZXMN10A08DN8TC 13” 12mm DEVICE MARKING • ZXMN 10A08D ISSUE 4 - JANUARY 2005 ZXMN10A08DN8 I = 2.1A D QUANTITY PER REEL 500 units 2,500 units 1 PINOUT Top View ...

Page 2

... ZXMN10A08DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate source voltage Continuous drain current V =10V =10V =10V (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) (a) Power dissipation at T =25°C A Linear derating factor (b) Power dissipation at T =25° ...

Page 3

... ISSUE 4 - JANUARY 2005 TYPICAL CHARACTERISTICS 3 ZXMN10A08DN8 ...

Page 4

... ZXMN10A08DN8 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (1)(3) Forward transconductance (3) DYNAMIC Input capacitance Output capacitance Reverse transfer capacitance (2) (3) SWITCHING Turn-on delay time Rise time Turn-off delay time ...

Page 5

... ISSUE 4 - JANUARY 2005 TYPICAL CHARACTERISTICS 5 ZXMN10A08DN8 ...

Page 6

... ZXMN10A08DN8 TYPICAL CHARACTERISTICS ISSUE 4 - JANUARY 2005 6 ...

Page 7

... The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on towww.zetex.com ISSUE 4 - JANUARY 2005 ZXMN10A08DN8 Millimeters Inches DIM ...

Related keywords