FS10AS-06 Renesas Electronics Corporation., FS10AS-06 Datasheet - Page 4

• Manufacturer Part Number: FS10AS-06
• Description: High-speed Switching Use Nch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FS10AS-06
Rev.1.00, Aug.20.2004, page 4 of 6
10
10
10
10
40
32
24
16
20
16
12
8
0
7
5
3
2
7
5
3
2
7
5
3
2
8
4
0
4
3
2
1
0
3 5 7
0
Transfer Characteristics (Typical)
Tch = 25°C
I
D
Gate-Source Voltage V
Drain-Source Voltage V
Drain-Source Voltage (Typical)
= 10A
10
Gate-Source Voltage vs.
4
Gate Charge Qg (nC)
4
Gate Charge (Typical)
0
2
Capacitance vs.
3 5 7
8
8
10
1
12
12
2
3 5 7
40V
20V
Tc = 25°C
V
Pulse Test
Ciss
Coss
Crss
Tch = 25°C
f = 1MHz
V
V
GS
DS
GS
DS
DS
16
16
10
= 10V
= 0V
= 10V
(V)
(V)
2
2 3
20
20
10
10
10
10
10
10
40
32
24
16
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
8
0
2
1
0
10
2
1
0
10
0
Switching Characteristics (Typical)
Tch = 25°C
V
V
R
0
0
V
Pulse Test
Forward Transfer Admittance vs.
DD
GS
GEN
Source-Drain Voltage V
GS
Source-Drain Diode Forward
td(on)
2 3
2 3
= 30V
= 10V
= 0V
Characteristics (Typical)
0.4
td(off)
Drain Current (Typical)
= R
125°C
Tc = 25°C
Drain Current I
Drain Current I
GS
4
4
5 7
5 7
= 50Ω
0.8
75°C
10
10
tf
1
tr
1
1.2
Tc = 125°C
75°C
25°C
2
D
2
D
V
Pulse Test
(A)
(A)
3
3
DS
SD
1.6
4 5
4 5
= 5V
(V)
7 10
7 10
2.0
2
2