BT258U NXP Semiconductors, BT258U Datasheet - Page 3

• Manufacturer Part Number: BT258U
• Description: Thyristors Logic Level
• Manufacturer: NXP Semiconductors

Philips Semiconductors
March 1999
Thyristors
logic level
Fig.2. Maximum permissible non-repetitive peak
Fig.1. Maximum on-state dissipation, P
8
7
6
5
4
3
2
1
0
Fig.3. Maximum permissible rms current I
9
8
7
6
5
4
3
2
1
0
-50
0
on-state current I
Ptot / W
1000
IT(RMS) / A
100
10
conduction
angle
degrees
10us
versus mounting base temperature T
30
60
90
120
180
average on-state current, I
ITSM / A
I
T
Tj initial = 25 C max
dI /dt limit
1
sinusoidal currents, t
T
form
factor
a = form factor = I
4
2.8
2.2
1.9
1.57
a
T
0
I TSM
time
4
2
100us
TSM
2.8
IT(AV) / A
, versus pulse width t
BT150
BT258
Tmb / C
3
BT150
50
T / s
2.2
T(RMS)
p
4
1ms
1.9
T(AV)
/ I
10ms.
100
T(AV)
, where
Tmb(max) / C
5
.
111 C
a = 1.57
tot
, versus
mb
T(RMS)
p
10ms
, for
.
6
150
109
111
113
115
117
119
121
123
125
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
1.6
1.4
1.2
0.8
0.6
0.4
80
70
60
50
40
30
20
10
24
20
16
12
0
1
(T
8
4
0
0.01
-50
1
ITSM / A
VGT(25 C)
IT(RMS) / A
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
currents, f = 50 Hz; T
GT
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
10
0.1
surge duration / s
, versus number of cycles, for
BT258
BT151
BT150
Tj / C
50
I
mb
T
Tj initial = 25 C max
100
BT258U series
Product specification
1
T
111˚C.
100
I TSM
time
Rev 1.000
1000
150
10
j
.