BT258U NXP Semiconductors, BT258U Datasheet

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BT258U

Manufacturer Part Number
BT258U
Description
Thyristors Logic Level
Manufacturer
NXP Semiconductors
Datasheet
1.BT258U.pdf (6 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BT258U-600R
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
GENERAL DESCRIPTION
Passivated, sensitive gate thyristors
in a plastic envelope, intended for use
in general purpose switching and
phase control applications. These
devices are intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low
power gate trigger circuits.
PINNING - SOT533
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/ s.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1k or less.
March 1999
Thyristors
logic level
SYMBOL PARAMETER
V
I
I
I
I
dI
I
V
V
P
P
T
T
NUMBER
T(AV)
T(RMS)
TSM
2
GM
t
stg
j
DRM
GM
RGM
GM
G(AV)
T
/dt
PIN
tab
1
2
3
, V
RRM
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
DESCRIPTION
cathode
anode
anode
gate
QUICK REFERENCE DATA
PIN CONFIGURATION
V
CONDITIONS
half sine wave; T
all conduction angles
half sine wave; T
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
I
RRM
T(AV)
T(RMS)
TSM
G
DRM
/dt = 50 mA/ s
= 10 A; I
,
Top view
G
current
1
PARAMETER
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
= 50 mA;
2
1
mb
j
= 25 ˚C prior to
3
MBK915
111 ˚C
BT258U-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
-500R -600R -800R
a
500
MAX. MAX. MAX. UNIT
500R
500
75
5
8
1
MAX.
Product specification
600
125
BT258U series
150
0.5
75
82
28
50
600R
5
8
2
5
5
5
600
75
5
8
1
2
g
800
800R
800
75
5
8
Rev 1.000
k
UNIT
A/ s
A
W
W
˚C
˚C
V
A
A
A
A
A
V
V
2
V
A
A
A
s

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BT258U Summary of contents

Page 1

... ˚C prior to j surge over any 20 ms period 1 Product specification BT258U series MAX. MAX. MAX. UNIT BT258U- 500R 600R 800R 500 600 800 ...

Page 2

... mA DRM(max / 125 ˚C; D DRM(max / / Product specification BT258U series MIN. TYP. MAX. UNIT - - 2.0 K K/W MIN. TYP. MAX. UNIT - 50 200 1.3 1.5 ...

Page 3

... C 1.4 1.2 1 0.8 0.6 0.4 100 150 -50 , T(RMS Product specification BT258U series ITSM / A BT258 I TSM initial = 25 C max 1 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. BT150 IT(RMS 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...

Page 4

... dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT258U series BT150+ typ max 0 BT150 0.1ms 1ms 10ms 0. j-mb pulse width RGK = 100 ohms ...

Page 5

... IEC SOT533 Fig.13. SOT533 (TO251). pin 2 connected to mounting base. March 1999 mounting base 2 scale 6.73 5.36 9.8 1.00 4.57 2.285 9.4 1.10 6.47 5.26 REFERENCES JEDEC EIAJ TO-251 5 Product specification BT258U series SOT533 EUROPEAN ISSUE DATE PROJECTION 99-02-18 Rev 1.000 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1999 6 Product specification BT258U series Rev 1.000 ...

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