MCRF200 Microchip Technology Inc., MCRF200 Datasheet - Page 12

• Manufacturer Part Number: MCRF200
• Description: 125 Khz Microid? Passive Rfid Device
• Manufacturer: Microchip Technology Inc.

MCRF200
TABLE 5-3:
TABLE 5-4:
DS21219H-page 12
Bond pad opening
Die backgrind thickness
Die backgrind thickness tolerance
Die passivation thickness (multilayer)
Die Size:
Die size X*Y before saw (step size)
Die size X*Y after saw
Note 1:
Notice: Extreme care is urged in the handling and assembly of die products since they are susceptible to
Wafer Diameter
Die separation line width
Dice per wafer
Batch size
2:
3:
4:
5:
mechanical and electrostatic damage.
The bond pad size is that of the passivation opening. The metal overlaps the bond pad passivation by at
least 0.1 mil.
Metal Pad Composition is 98.5% Aluminum with 1% Si and 0.5% Cu.
As the die thickness decreases, susceptibility to cracking increases. It is recommended that the die be as
thick as the application will allow.
The Die Passivation thickness (0.905 m) can vary by device depending on the mask set used. The
passivation is formed by:
-Layer 1: Oxide (undoped oxide 0.135 m)
-Layer 2: PSG (doped oxide, 0.43 m)
-Layer 3: Oxynitride (top layer, 0.34 m)
The conversion rate is 25.4 m/mil.
Specifications
Specifications
DIE MECHANICAL DIMENSIONS
WAFER MECHANICAL SPECIFICATIONS
Min
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
44.15 x 68.44
42.58 x 66.87
3.5 x 3.5
89 x 89
0.9050
14,000
177.8
279.4
Typ
Typ
80
24
11
—
—
7
8
±25.4
Max
Max
±1
—
—
—
—
—
—
—
—
—
—
—
—
—
wafer
Unit
Unit
inch
die
mil
mil
mil
mil
mil
mil
m
m
m
m
m
m
Note 1, Note 2
Sawed 6” wafer on frame
(option = WF) Note 3
Unsawed wafer
(option = W) Note 3
Note 4
—
—
150 mm
¤ 2003 Microchip Technology Inc.
Comments
Comments