TD9N10 STMicroelectronics, TD9N10 Datasheet - Page 3

• Manufacturer Part Number: TD9N10
• Description: N-channel 100v - 0.23 Ohm - 9a Dpak/ipak Power Mos Transistor
• Manufacturer: STMicroelectronics

ELECTRICAL CHARACTERISTICS (T
Table 6. Off
Table 7. On
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Table 8. Dynamic
Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
Table 9. Switching On
Table 10. Switching Off
V
(di/dt)on
Symbol
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
td(on)
t
g
I
I
C
DS(on)
C
r(Voff)
GS(th)
C
Q
Q
GSS
DSS
fs
Q
tr
t
oss
t
rss
iss
gs
gd
c
f
g
(1)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Off-voltage Rise Time
Fall Time
Cross-over Time
(1)
Parameter
Parameter
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
V
V
V
V
V
V
D
V
V
GS
GS
GS
GS
DS
DS
DS
DS
DS
DD
DD
DD
DD
GS
GS
= 250 A; V
case
= Max Rating
= Max Rating x 0.8; Tc = 125 °C
= ± 20 V
= V
= 10V; I
= 10V; I
> I
= 25 V; f = 1 MHz; V
= 50 V; I
= 80 V; I
= 10 V (see test circuit, Figure 22)
= 80 V; I
= 80 V; I
= 10 V (see test circuit, Figure 22)
= 10 V (see test circuit, Figure 24)
D(on)
= 25°C unless otherwise specified)
GS
; I
Test Conditions
Test Conditions
D
D
Test Conditions
x R
Test Conditions
Test Conditions
D
D
D
D
D
GS
= 4.5 A
= 4.5 A; Tc = 100 °C
= 250 A
= 4.5 A; R
= 9 A; R
= 9 A; V
= 9 A; R
DS(on)max
= 0
GS
G
G
GS
; I
G
= 4.7 
= 4.7 
= 10 V
D
= 4.7 
= 0
= 4.5 A
Min.
Min.
Min.
Min.
Min.
100
2
2
STD9N10/STD9N10-1
Typ.
Typ.
Typ.
Typ.
Typ.
0.23
330
440
90
25
10
40
15
15
25
50
3
4
6
5
± 100
1000
Max.
Max.
0.27
0.54
Max.
Max.
Max.
250
450
120
40
15
60
25
25
35
70
4
Unit
Unit
Unit
Unit
A/s
Unit
A
A
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns


V
V
S
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