TD9N10 STMicroelectronics, TD9N10 Datasheet

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TD9N10

Manufacturer Part Number
TD9N10
Description
N-channel 100v - 0.23 Ohm - 9a Dpak/ipak Power Mos Transistor
Manufacturer
STMicroelectronics
Datasheet
Table 1. General Features
FEATURES SUMMARY
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APPLICATIONS
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Table 2. Order Codes
May 2004
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100°C
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175°C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX "-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
REGULATORS
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
STD9N10-1
STD9N10
Type
STD9N10T4
STD9N10-1
DS(on)
100 V
100 V
V
= 0.23 
DSS
< 0.27 
< 0.27 
R
N-CHANNEL 100V - 0.23  - 9A DPAK/IPAK
DS(on)
D9N10
D9N10
9 A
9 A
I
D
Figure 1. Package
Figure 2. Internal Schematic Diagram
POWER MOS TRANSISTOR
TO-251
IPAK
1
2
3
STD9N10-1
STD9N10
REV. 2
TO-252
DPAK
1
3
1/12

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TD9N10 Summary of contents

Page 1

... MOTOR CONTROL, AUDIO AMPLIFIERS I AUTOMOTIVE ENVIRONMENT (INJECTION, I ABS, AIR-BAG, LAMPDRIVERS, Etc.) Table 2. Order Codes STD9N10T4 D9N10 STD9N10-1 D9N10 May 2004 POWER MOS TRANSISTOR Figure 1. Package IPAK TO-251 Figure 2. Internal Schematic Diagram STD9N10 STD9N10 DPAK TO-252 REV. 2 1/12 ...

Page 2

... STD9N10/STD9N10-1 Table 3. Absolute Maximum Ratings Symbol Parameter V Drain-source Voltage ( Drain- gate Voltage (R DGR V Gate-source Voltage GS I Drain Current (cont Drain Current (cont (1) Drain Current (pulsed Total Dissipation at T tot Derating Factor T Storage Temperature stg T Max. Operating Junction Temperature j Note: 1 ...

Page 3

... (see test circuit, Figure 22 Test Conditions 4 (see test circuit, Figure 24) GS STD9N10/STD9N10-1 Min. Typ. Max. Unit 100 V 250 A 1000 A ± 100 nA Min. Typ. Max. Unit 0.23 ...

Page 4

... STD9N10/STD9N10-1 Table 11. Source Drain Diode Symbol Parameter I Source-drain Current SD (1) Source-drain Current I SDM (pulsed) Forward On Voltage ( Reverse Recovery Time rr Q Reverse RecoveryCharge rr I Reverse RecoveryCurrent RRAM Note: 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Figure 3 ...

Page 5

... Figure 7. Transfer Characteristics Figure 9. Static Drain-source On Resistance Figure 11. Capacitance Variations STD9N10/STD9N10-1 Figure 8. Transconductance Figure 10. Gate Charge vs Gate-source Voltage Figure 12. Normalized Gate Threshold Voltage vs Temperature 5/12 ...

Page 6

... STD9N10/STD9N10-1 Figure 13. Normalized On Resistance vs Temperature Figure 15. Turn-off Drain-source Voltage Slope Figure 17. Switching Safe Operating Area 6/12 Figure 14. Turn-on Current Slope Figure 16. Cross-over Time Figure 18. Accidental Overload Area ...

Page 7

... Figure 19. Source-drain Diode Forward Characteristics STD9N10/STD9N10-1 7/12 ...

Page 8

... STD9N10/STD9N10-1 Figure 20. Unclamped Inductive Load Test Circuit Figure 22. Switching Times Test Circuits For Resistive Load Figure 24. Test Circuit For Inductive Load Switching And Diode Recovery Times 8/12 Figure 21. Unclamped Inductive Waveforms Figure 23. Gate Charge Test Circuit ...

Page 9

... Figure 25. DPAK Package Dimensions Note: Drawing is not to scale. Typ Max Min 2.40 0.087 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.018 0.60 0.019 6.20 0.236 6.60 0.252 4.60 0.173 10.10 0.368 0.8 1.00 0.024 8° 0° STD9N10/STD9N10-1 inches Typ Max 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.031 0.039 0° P032P_B 9/12 ...

Page 10

... STD9N10/STD9N10-1 Table 13. IPAK Mechanical Data millimeters Symbol Min A 2.2 A1 0.9 A3 0.7 B 0. 0. 6.4 G 4 0.8 L2 Figure 26. IPAK Package Dimensions L2 Note: Drawing is not to scale. 10/12 Typ Max Min 2.4 0.086 1.1 0.035 1.3 0.027 0.9 0.025 5.4 0.204 0.85 0.63 0.95 0.6 0.017 0.6 0.019 6.2 0.236 6.6 0.252 4.6 0.173 16.3 0.626 9.4 0.354 1.2 0.031 ...

Page 11

... REVISION HISTORY Table 14. Revision History Date Revision March-1996 1 3-May-2004 2 Description of Changes First Issue Stylesheet update. No content change. STD9N10/STD9N10-1 11/12 ...

Page 12

... STD9N10/STD9N10-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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