GI9980 E-Tech Electronics LTD, GI9980 Datasheet - Page 2

• Manufacturer Part Number: GI9980
• Description: N-channel Enhancement Mode Power Mosfet
• Manufacturer: E-Tech Electronics LTD

Electrical Characteristics(Tj = 25
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : )
Drain-Source Leakage Current(Tj=
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1. Pulse width limited by safe operating area.
G
I
9980
2. Pulse width 300us, duty cycle 2%.
Parameter
Parameter
2
2
2
2
150 :
2
)
Symbol
R
Symbol
BV
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
GSS
DSS
DSS
g
Q
d(on)
d(off)
R
Q
T
T
T
oss
DSS
iss
rss
SD
fs
gs
gd
g
g
r
f
rr
rr
/
Unless otherwise specified)
Tj
Min.
Min.
1.0
80
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1810
Typ.
0.07
Typ.
135
140
1.6
20
18
11
11
20
29
30
96
57
5
-
-
-
-
-
-
-
-
Max.
2900
Max.
100
D 100
3.0
1.2
10
45
55
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V/ :
m Ł
Unit
nA
uA
uA
nC
pF
nC
ns
ns
V
V
S
V
Ł
V
Reference to 25 : , I
V
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f=1.0MHz
f=1.0MHz
I
I
dI/dt=100A/ s
D
D
S
S
GS
DS
DS
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
DS
G
D
=12A
=12A
=20A, V
=12A, V
=3.3 Ł
=3.3 Ł
=0, I
=V
=10V, I
= D 25V
=80V, V
=64V, V
=10V, I
=4.5V, I
=64V
=4.5V
=40V
=10V
=0V
=25V
Test Conditions
Test Conditions
ISSUED DATE :2005/09/26
REVISED DATE :
GS
D
, I
=250uA
GS
GS
D
D
D
D
GS
GS
=12A
=12A
=250uA
=0V
=0V
=8A
=0
=0
Page: 2/4
D
=1mA