GI9980 E-Tech Electronics LTD, GI9980 Datasheet

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GI9980

Manufacturer Part Number
GI9980
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
E-Tech Electronics LTD
Datasheet
1.GI9980.pdf (4 pages)
G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The G
on-resistance and cost-effectiveness.
The through-hole version
such as DC/DC converters.
Features
*Low Gate Charge
*Single Drive Requirement
*Fast Switching Performance
Package Dimensions
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
G
G
I
9980
I
I
9
I
9
9980 provide the designer with the best combination of fast switching, ruggedized device design, low
9
9
8
8
0
0
Parameter
Parameter
1
(TO-251)
GS
GS
@10V
@10V
is available for low-profile applications and suited for low voltage applications
TO-251
Max.
Max.
I
P
I
D
D
D
@T
@T
Symbol
@T
Symbol
Tj, Tstg
Rthj-a
Rthj-c
V
V
I
C
DM
C
GS
C
DS
=100 :
=25 :
=25 :
REF.
C
D
A
B
E
F
-55 ~ +150
Min.
6.40
5.20
6.80
7.20
0.60
Ratings
Value
2.30 REF.
Millimeter
21.3
13.4
41.7
0.33
f 25
110
3.0
80
80
Max.
6.80
5.50
7.20
7.80
0.90
Pb Free Plating Product
BV
R
I
D
REF.
DS(ON)
G
H
M
K
ISSUED DATE :2005/09/26
REVISED DATE :
J
L
DSS
0.50
2.20
0.45
0.45
0.90
5.40
Min.
W/
Millimeter
Unit
Unit
W
V
V
A
A
A
Page: 1/4
/W
/W
45m
21.3A
Max.
0.70
2.40
0.55
0.60
1.50
5.80
80V

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GI9980 Summary of contents

Page 1

N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description I The G 9980 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The ...

Page 2

Electrical Characteristics( Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj= Drain-Source Leakage Current(Tj= 150 : Static Drain-Source On-Resistance 2 Total Gate Charge Gate-Source Charge Gate-Drain ...

Page 3

Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode I G 9980 ISSUED DATE :2005/09/26 REVISED DATE : Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction ...

Page 4

Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the ...

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