MMUN2211RLT1 E-Tech Electronics LTD, MMUN2211RLT1 Datasheet

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MMUN2211RLT1

Manufacturer Part Number
MMUN2211RLT1
Description
Bias Resistor Transistor
Manufacturer
E-Tech Electronics LTD
Datasheet
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor.The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
DEVICE MARKING AND RESISTOR VALUES
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SOT-23 package can be soldered using wave or
Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
This new series of digital transistors is designed to replace a single device and its
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ T
Derate above 2 C
Rating
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2216RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RLT1
MMUN2234RLT1
Rating
Device
(T
(2)
(2)
(2)
(2)
(2)
(2)
(2)
A
= 2 C unless otherwise noted)
A
= 2 C
(1)
PIN1
base
(Input)
Marking
A8A
A8B
A8D
A8G
A8H
A8K
A8E
A8F
A8L
A8C
A8J
R1
R2
Symbol
Symbol
PIN2
Emitter
(Ground)
T
PIN3
Collector
(output)
V
V
R
J
P
T
I
CBO
, T
CEO
C
D
JA
L
stg
R1 (K)
4.7
2.2
4.7
4.7
10
22
47
10
10
22
1
–65 to +150
Value
Value
200
100
1.6
625
260
50
10
50
MMUN2211RLT1
MMUN2212RLT1
MMUN2213RLT1
MMUN2214RLT1
MMUN2215RLT1
MMUN2230RLT1
MMUN2231RLT1
MMUN2232RLT1
MMUN2233RL34
CASE
SOT– 23 (TO–236AB)
B I A S R E S I S T O R
TRANSISTOR
NPN SILICON
1
R2 (K)
318–08, STYLE 6
2.2
4.7
10
22
47
47
47
47
1
mW C
mAdc
°C/W
Unit
Unit
mW
Sec
Vdc
Vdc
°C
°C
2
3
Q2–1/8

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MMUN2211RLT1 Summary of contents

Page 1

... J stg T L Marking R1 (K) A8A A8B A8C A8D A8E A8F A8G A8H A8J A8K A8L MMUN2211RLT1 MMUN2212RLT1 MMUN2213RLT1 MMUN2214RLT1 MMUN2215RLT1 MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1 MMUN2233RL34 NPN SILICON TRANSISTOR CASE 318–08, STYLE 6 SOT– 23 (TO–236AB) ...

Page 2

... =5.0V,V =3.5V 1. Output Voltage(off)(V =5.0V,V =0.5V =5.0V,V =0.050V, R =1. =5.0V,V =0.25V, R =1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% MMUN2211RLT1 SERIES (T = 25°C unless otherwise noted) A Symbol Min = CBO = CEO MMUN2211RLT1 I - EBO MMUN2212RLT1 - MMUN2213RLT1 - MMUN2214RLT1 - MMUN2215RLT1 - MMUN2216RLT1 - ...

Page 3

... ELECTRICAL CHARACTERISTICS Characteristic (3) ON CHARACTERISTICS Input Resistor Resistor Ratio MMUN2211RLT1 MMUN2212RLT1 MMUN2213RLT1 MMUN2214RLT1 MMUN2215RLT1 MMUN2216RLT1 MMUN2230RLT1 MMUN2231RLT1 MMUN2232RLT1 MMUN2233RLT1 MMUN2234RLT1 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. MMUN2211RLT1 SERIES (T = 25°C unless otherwise noted) (Continued) A Symbol Min MMUN2211RLT1 R1 7.0 MMUN2212RLT1 15.4 MMUN2213RLT1 32.9 MMUN2214RLT1 7 ...

Page 4

... V , REVERSE BIAS VOLTAGE (VOLTS 0 0 Figure MMUN2211RLT1 SERIES T = –25°C A 25°C 75° COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat MHz 25° Figure 4 ...

Page 5

... V Figure 10. Output Current versus Input Voltage –25°C A 75° COLLECTOR CURRENT (mA) C MMUN2211RLT1 SERIES =75°C A 25°C –25°C 10 100 , COLLECTOR CURRENT (mA) C Figure 8. DC Current Gain 75°C 25° –25°C A ...

Page 6

... Figure 15. Output Current versus Input Voltage =–25°C A 75° COLLECTOR CURRENT (mA) C MMUN2211RLT1 SERIES =75°C A 25°C –25°C 10 100 I , COLLECTOR CURRENT (mA) C Figure 13. DC Current Gain 25° –25° ...

Page 7

... Figure 20. Output Current versus Input Voltage T = –25° 0 COLLECTOR CURRENT (mA) C MMUN2211RLT1 SERIES T =75°C A 25°C –25° 100 I , COLLECTOR CURRENT (mA) C Figure 18. DC Current Gain 75°C 25° ...

Page 8

... TYPICAL APPLICATIONS FOR NPN BRTs +12 V FROM P OR OTHER LOGIC Figure 22. Level Shifter: Connects Volt Circuits to Logic V CC OUT IN Figure 23. Open Collector Inverter: Inverts the Input Signal MMUN2211RLT1 SERIES ISOLATED LOAD +12 V LOAD Figure 24. Inexpensive, Unregulated Current Source Q2–8/8 ...

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