PDTA123J NXP Semiconductors, PDTA123J Datasheet - Page 5

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PDTA123J

Manufacturer Part Number
PDTA123J
Description
Pdta123j Series Pnp Resistor-equipped Transistors; R1 = 2.2 Kohm, R2 = 47 Kohm
Manufacturer
NXP Semiconductors
Datasheet

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Philips Semiconductors
CHARACTERISTICS
T
2004 Aug 02
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
c
PNP resistor-equipped transistors;
R1 = 2.2 k , R2 = 47 k
= 25 C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
PARAMETER
V
V
V
V
V
I
I
I
C
C
C
E
CB
CE
CE
EB
CE
= i
= 5 mA; I
= 100 A; V
= 5 mA; V
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
e
= 0; V
5
CONDITIONS
CB
C
C
B
CE
E
B
B
= 0
= 0.25 mA
= 10 mA
= 10 V; f = 1 MHz
CE
= 0
= 0
= 0; T
= 0.3 V
= 5 V
j
= 150 C
100
1.54
17
MIN.
1.1
PDTA123J series
2.2
21
TYP.
0.6
0.75
Product specification
2.86
26
3
MAX.
100
1
50
180
100
0.5
nA
mV
V
V
k
pF
UNIT
A
A
A

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