PDTA123J NXP Semiconductors, PDTA123J Datasheet - Page 2

• Manufacturer Part Number: PDTA123J
• Description: Pdta123j Series Pnp Resistor-equipped Transistors; R1 = 2.2 Kohm, R2 = 47 Kohm
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
2004 Aug 02
PDTA123JE
PDTA123JEF
PDTA123JK
PDTA123JM
PDTA123JS
PDTA123JT
PDTA123JU
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
PNP resistor-equipped transistors;
R1 = 2.2 k , R2 = 47 k
TYPE NUMBER
* = t: Made in Malaysia.
* = W: Made in China.
SOT54 (TO-92)
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT323
SOT23
PACKAGE
SC-101
SC-75
SC-89
SC-59
SC-43
SC-70
EIAJ
2
QUICK REFERENCE DATA
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
V
I
R1
R2
SYMBOL
O
CEO
MARKING CODE
collector-emitter
voltage
output current (DC)
bias resistor
bias resistor
PARAMETER
TA123J
*23
*43
DG
27
27
43
(1)
(1)
PDTA123J series
PDTC123JE
PDTC123JEF
PDTC123JK
PDTC123JM
PDTC123JS
PDTC123JT
PDTC123JU
Product specification
NPN COMPLEMENT
2.2
47
TYP.
MAX.
50
100
V
mA
k
k
UNIT