VMK90-02T2SN IXYS Corporation, VMK90-02T2SN Datasheet
VMK90-02T2SN
Manufacturer Part Number
VMK90-02T2SN
Description
Transistor Mosfet N-CH 200V 83A 3TO-240AA
Manufacturer
IXYS Corporation
Datasheet
1.VMK90-02T2SN.pdf
(4 pages)
Dual Power
MOSFET Module
Common-Source connected
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
Data per MOSFET unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
D25
D80
DM
GSS
DSS
J
JM
stg
DGR
D
ISOL
GS(th)
DSS
GS
GSM
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
50/60 Hz
I
Mounting torque(M5 or 10-32 UNF)
Terminal connection torque (M5)
Typical including screws
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
ISOL
J
J
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 80°C
= 25°C, t
= 25°C, T
£ 1 mA
= 0 V, I
= V
= ±20 V DC, V
= 0.8 • V
= 10 V, I
GS
, I
D
D
p
D
DSS
= 1 mA
= 3 mA
= 10 ms, pulse width limited by T
J
= 0.5 • I
, V
= 150°C,
V
DS
GS
GS
= 0
= 0 V, T
= 0 V, T
D25
GS
t = 1 s
t = 1 min
= 6.8 kW
(T
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
VMK 90-02T2
4
5
min.
200
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
Characteristic Values
JM
-40 ... +150
-40 ... +125
2
Maximum Ratings
1
typ.
2
2500
3000
200
200
±20
±30
330
380
150
83
62
90
3
max.
500 nA
400 mA
25 mW
4
2 mA
6
V~
V~
°C
°C
°C
7
W
V
V
V
V
A
A
A
V
V
g
V
I
R
TO-240 AA
1, 3 = Drain,
5, 6 = Gate,
Features
Applications
Advantages
D25
Two MOSFET with common source
International standard package
JEDEC TO-240 AA
Direct copper bonded Al
base plate
Isolation voltage 3000 V~
Low R
Low package inductance for high
speed switching
Kelvin source contact
Keyed twin plugs
Push-pull inverters
Switched-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
AC static switches
Easy to mount with two screws
Space and weight savings
High power density
Low losses
DSS
DS(on)
E 72873
DS(on)
HDMOS
= 200 V
= 83 A
= 25 mW
1
2 = Common Source
4, 7 = Kelvin Source
2
TM
process
3
2
O
3
6
ceramic
7
4
5
1 - 4
Related parts for VMK90-02T2SN
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
MOSFET MOD DUAL COMMON TO-240AA
Manufacturer:
IXYS
Datasheet:
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
High Current Power MOSFET
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
VMK90-02T2SN Summary of contents
Page 1
Dual Power MOSFET Module Common-Source connected N-Channel Enhancement Mode Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C; R DGR J V Continuous GS V Transient GSM 25°C D25 ...
Page 2
... GS Pulse test, t £ 300 ms, duty cycle d £ -di/dt = 100 A/ms © 2000 IXYS All rights reserved IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. pulsed 60 D25 9000 15000 ...
Page 3
175 150 125 100 Fig. 1 Typical output characteristics I 1.4 normalized 10V DS(on) D25 GS 1.3 R DS(on) norm. 1.2 ...
Page 4
100 100 200 Fig. 7 Typical turn-on gate charge characteristics 100 0.1 ...