VMK90-02T2 IXYS, VMK90-02T2 Datasheet

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VMK90-02T2

Manufacturer Part Number
VMK90-02T2
Description
MOSFET MOD DUAL COMMON TO-240AA
Manufacturer
IXYS
Datasheet

Specifications of VMK90-02T2

Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
25 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
83A
Vgs(th) (max) @ Id
4V @ 3mA
Gate Charge (qg) @ Vgs
450nC @ 10V
Input Capacitance (ciss) @ Vds
15000pF @ 25V
Power - Max
380W
Mounting Type
Chassis Mount
Package / Case
TO-240AA
Vdss, Max, (v)
200
Id25, Tc = 25°c, (a)
83
Id80, Tc = 80°c, (a)
62
Id90, Tc = 90°c, (a)
-
Rds(on), Max, Tj = 25°c, (mohms)
25
Tf, Typ, (ns)
100
Tr, Typ, (ns)
80
Rthjc, Max, (ºc/w)
0.33
Package Style
TO-240 AA (+ Kelvin contact)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VMK90-02T2
Quantity:
83
Dual Power
MOSFET Module
Common-Source connected
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
P
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
Data per MOSFET unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
D25
D80
DM
GSS
DSS
J
JM
stg
DGR
D
ISOL
GS(th)
DSS
GS
GSM
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
50/60 Hz
I
Mounting torque(M5 or 10-32 UNF)
Terminal connection torque (M5)
Typical including screws
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
ISOL
J
J
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 80°C
= 25°C, t
= 25°C, T
£ 1 mA
= 0 V, I
= V
= ±20 V DC, V
= 0.8 • V
= 10 V, I
GS
, I
D
D
p
D
DSS
= 1 mA
= 3 mA
= 10 ms, pulse width limited by T
J
= 0.5 • I
, V
= 150°C,
V
DS
GS
GS
= 0
= 0 V, T
= 0 V, T
D25
GS
t = 1 s
t = 1 min
= 6.8 kW
(T
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
VMK 90-02T2
4
5
min.
200
2.5-4.0/22-35 Nm/lb.in.
2.5-4.0/22-35 Nm/lb.in.
Characteristic Values
JM
-40 ... +150
-40 ... +125
2
Maximum Ratings
1
typ.
2
2500
3000
200
200
±20
±30
330
380
150
83
62
90
3
max.
500 nA
400 mA
25 mW
4
2 mA
6
V~
V~
°C
°C
°C
7
W
V
V
V
V
A
A
A
V
V
g
V
I
R
TO-240 AA
1, 3 = Drain,
5, 6 = Gate,
Features
Applications
Advantages
D25
Two MOSFET with common source
International standard package
JEDEC TO-240 AA
Direct copper bonded Al
base plate
Isolation voltage 3000 V~
Low R
Low package inductance for high
speed switching
Kelvin source contact
Keyed twin plugs
Push-pull inverters
Switched-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
AC static switches
Easy to mount with two screws
Space and weight savings
High power density
Low losses
DSS
DS(on)
E 72873
DS(on)
HDMOS
= 200 V
= 83 A
= 25 mW
1
2 = Common Source
4, 7 = Kelvin Source
2
TM
process
3
2
O
3
6
ceramic
7
4
5
1 - 4

Related parts for VMK90-02T2

VMK90-02T2 Summary of contents

Page 1

... DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ Data per MOSFET unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved VMK 90-02T2 Maximum Ratings 200 = 6.8 kW 200 GS ±20 ± ...

Page 2

... S GS Pulse test, t £ 300 ms, duty cycle d £ -di/dt = 100 A/ms © 2000 IXYS All rights reserved IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. pulsed 60 D25 9000 15000 1600 ...

Page 3

... R @0 10V DS(on) D25 GS 1.3 R DS(on) norm. 1.2 V 1.1 1.0 0.9 0 Fig. 3 Typical normalized R 100 Fig. 5 Continuous drain current I © 2000 IXYS All rights reserved 200 175 150 7 V 125 100 Fig. 2 Typical transfer characteristics 2.50 R DS(on) 2.25 norm. ...

Page 4

... Fig. 7 Typical turn-on gate charge characteristics 100 0 Fig. 9 Typical capacitances 100 Fig. 11 Typical transconductance g © 2000 IXYS All rights reserved 1000 A I Limited 100 non-repetitive 1 300 nC 400 Fig. 8 Forward Safe Operating Area, I 200 A 150 C iss I S 100 C oss 50 C rss ...

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