STG2507 SamHop Microelectronics Corp., STG2507 Datasheet - Page 3

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STG2507

Manufacturer Part Number
STG2507
Description
Dual P-Channel E nhancement Mode Field Effect Transistor
Manufacturer
SamHop Microelectronics Corp.
Datasheet
S T G 2507
E LE CTR ICAL CHAR ACTE R IS TICS (T
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
Diode Forward Voltage
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Parameter
2000
1600
1200
800
400
16
12
20
8
4
0
0
F igure 1. Output C haracteris tics
0
0
V
V
DS
DS
V
F igure 3. C apacitance
V
4
2
G S
G S
, Drain-to S ource Voltage (V )
, Drain-to-S ource Voltage (V )
C rs s
=-4.5,-4,-3.5,V
V
=-2V
G S
=-1V
4
8
12
6
16
V
8
G S
C os s
C is s
S ymbol
=-1.5V
20
10
V
S D
24
A
12
=25 C unless otherwise noted)
b
V
GS
3
Condition
F igure 4. On-R es is tance Variation with
= 0V, Is =1.7A
2.2
1.8
1.4
1.0
0.6
0.2
15
12
0
0.0
9
6
3
0
-50
F igure 2. Trans fer C haracteris tics
V
G S
I
D
-25
=-4.5V
=6A
V
0.4
G S
Temperature
, G ate-to-S ource Voltage (V )
0
0.8
T j=125 C
25
1.2
Min Typ Max Unit
50
-55 C
1.6
75
-0.76
25 C
100
2.0
T j( C )
C
125
-1.2
2.4
V

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