GB20NB32LZ-1 ST Microelectronics, GB20NB32LZ-1 Datasheet

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GB20NB32LZ-1

Manufacturer Part Number
GB20NB32LZ-1
Description
N-CHANNEL PowerMESH TM IGBT
Manufacturer
ST Microelectronics
Datasheet
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
ORDERING INFORMATION
December 2003
STGB20NB32LZ
STGB20NB32LZ-1
POLYSILICON GATE VOLTAGE DRIVEN
LOW THRESHOLD VOLTAGE
LOW ON-VOLTAGE DROP
HIGH CURRENT CAPABILITY
HIGH VOLTAGE CLAMPING FEATURE
ELECTRONIC IGNITION FOR AUTOMOTIVE
STGB20NB32LZT4
STGB20NB32LZ-1
TYPE
SALES TYPE
IGBTs, with outstanding
CLAMPED
CLAMPED
V
CES
INTERNALLY CLAMPED PowerMESH™ IGBT
N-CHANNEL CLAMPED 20A - D
V
< 2.0 V
< 2.0 V
CE(sat)
GB20NB32LZ
GB20NB32LZ
MARKING
20 A
20 A
I
C
PACKAGE
D
D
INTERNAL SCHEMATIC DIAGRAM
I
2
2
2
PAK
PAK
PAK
STGB20NB32LZ-1
1
STGB20NB32LZ
3
TAPE & REEL
2
PACKAGING
PAK/I
TUBE
I
2
PAK
1 2
2
PAK
3
1/11

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GB20NB32LZ-1 Summary of contents

Page 1

... ELECTRONIC IGNITION FOR AUTOMOTIVE ORDERING INFORMATION SALES TYPE STGB20NB32LZT4 STGB20NB32LZ-1 December 2003 N-CHANNEL CLAMPED 20A - CE(sat) C < 2 < 2 MARKING PACKAGE GB20NB32LZ GB20NB32LZ STGB20NB32LZ STGB20NB32LZ-1 2 PAK PAK 2 I PAK INTERNAL SCHEMATIC DIAGRAM PACKAGING 2 TAPE & REEL D PAK 2 TUBE I ...

Page 2

... STGB20NB32LZ - STGB20NB32LZ-1 ABSOLUTE MAXIMUM RATINGS Symbol V Collector-Emitter Voltage (V CES V Reverse Battery Protection ECR V Gate-Emitter Voltage GE I Collector Current (continuous Collector Current (continuous Collector Current (pulsed Eas Single Pulse Energy T P Total Dissipation at T tot Derating Factor E ESD (Human Body Model) ...

Page 3

... Off Voltage Rise Time r off t Fall Time Off Voltage Delay Time d off E (**) Turn-off Switching Loss off (**)Losses Include Also the Tail (jedec Standardization) STGB20NB32LZ - STGB20NB32LZ °C UNLESS OTHERWISE SPECIFIED) CASE Test Conditions = MHz ...

Page 4

... STGB20NB32LZ - STGB20NB32LZ-1 Output Characteristics Normalized Gate Threshold Voltage vs Temp. Collector-Emitter On Voltage vs Temperature 4/11 Transfer Characteristics Transconductance Capacitance Variations ...

Page 5

... Gate Charge vs Gate-Emitter Voltage Break-Down Voltage vs Emitter Resistance Self Clamped Inductive Switching Energy vs Open Secondary Coil STGB20NB32LZ - STGB20NB32LZ-1 Normalized BreakDown Voltage vs Temperature B (Zener Gate-Emitter) vs Temperature VGEO dV/dt Gate-Emitter Resistance 5/11 ...

Page 6

... STGB20NB32LZ - STGB20NB32LZ-1 B Reverse Battery Voltage VEC Switching Off Safe Operating Area 6/11 Thermal Impedance ...

Page 7

... Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times STGB20NB32LZ - STGB20NB32LZ-1 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit 7/11 ...

Page 8

... STGB20NB32LZ - STGB20NB32LZ-1 DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1 0º 8/ PAK MECHANICAL DATA mm. TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 8 10.4 8.5 5.28 15.85 1.4 1.75 3.2 0.4 8º inch MIN. TYP. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 0.393 0.334 0.192 0.590 0.050 0.055 ...

Page 9

... TO-262 (I mm. DIM. MIN. TYP A 4.40 A1 2.40 b 0.61 b1 1.14 c 0.49 c2 1.23 D 8.95 e 2. 3.50 L2 1.27 STGB20NB32LZ - STGB20NB32LZ-1 2 PAK) MECHANICAL DATA MAX. MIN. 4.60 0.173 2.72 0.094 0.88 0.024 1.70 0.044 0.70 0.019 1.32 0.048 9.35 0.352 2.70 0.094 5.15 0.194 10.40 0.393 14 0.511 3.93 0.137 1.40 0.050 inch TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 ...

Page 10

... STGB20NB32LZ - STGB20NB32LZ PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0 ...

Page 11

... STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. STGB20NB32LZ - STGB20NB32LZ-1 © http://www.st.com 11/11 ...

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