STGW50NB60M ST Microelectronics, STGW50NB60M Datasheet
STGW50NB60M
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STGW50NB60M Summary of contents
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... May 2003 N-CHANNEL 50A - 600V - TO-247 I CE(sat)(25°C) C < 1 CESAT Parameter = 25° 100° 25°C C STGW50NB60M PowerMESH™ IGBT TO-247 INTERNAL SCHEMATIC DIAGRAM Value 600 20 ±20 100 50 400 250 2 –65 to 150 150 ( ) Pulse width limited by safe operating area ...
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... STGW50NB60M THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-h Thermal Resistance Case-heatsink Typ ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Collector-Emitter Breakdown BR(CES) Voltage I Collector cut-off CES ( Gate-Emitter Leakage GES Current ( (1) Symbol Parameter V Gate Threshold Voltage ...
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... Also the Tail (Jedec Standardization) Test Conditions V = 480 480 125 °C STGW50NB60M Min. Typ. Max. Unit 450 ns 130 ns 410 ns 300 4.1 mJ 730 ns 265 ns 565 ns 440 ns 6 ...
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... STGW50NB60M Thermal Impedance Output Characteristics Normalized Gate Threshold Voltage vs Temp. 4/9 Switching Off Safe Operating Area Transfer Characteristics Transconductance ...
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... Collector-Emitter On Voltage vs Temperature Capacitance Variations Total Switching losses vs Gate Resistance Gate-Charge vs Gate-Emitter Voltage Normalized Break-down Voltage vs Temp. Total Switching losses vs Temperature STGW50NB60M 5/9 ...
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... STGW50NB60M Total Switching losses vs Ic 6/9 Collector-Emitter on Voltage vs Current ...
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... Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching STGW50NB60M 7/9 ...
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... STGW50NB60M DIM. MIN. A 4.85 D 2. 15.45 L 19. 14. Dia 3.55 8/9 TO-247 MECHANICAL DATA mm. TYP MAX. 5.15 2.60 0.80 1. 2.40 3.40 10.90 15.75 20.15 4.30 18.50 14.80 34.60 5.50 3 5º 60º 3.65 inch MIN. TYP. 0.19 0.08 0.015 0.04 0.11 0.07 0.07 0.11 0.43 0.60 0.78 0.14 0.72 0.56 1.36 0.21 0.07 5º 60º 0.14 MAX. 0.20 0.10 0.03 0.05 0.09 0.13 0.62 0.79 0.17 0.58 0.11 0.143 ...
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