STGW50NB60M ST Microelectronics, STGW50NB60M Datasheet

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STGW50NB60M

Manufacturer Part Number
STGW50NB60M
Description
N-CHANNEL 50A - 600V - TO-247 PowerMESH IGBT
Manufacturer
ST Microelectronics
Datasheet

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STGW50NB60M
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STGW50NB60M
Manufacturer:
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STGW50NB60MD
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DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH
The suffix "M" identifies a family optimized to
achieve very low saturation on voltage for frequency
applications <10 KHz.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
May 2003
STGW50NB60M
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
LOW ON-VOLTAGE DROP (V
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
MOTOR CONTROL
WELDING EQUIPMENTS
Symbol
I
V
V
CM
P
V
T
CES
ECR
TOT
I
I
T
stg
GE
C
C
TYPE
j
( )
IGBTs, with outstanding performances.
Collector-Emitter Voltage (V
Reverse Battery Protection
Gate-Emitter Voltage
Collector Current (continuous) at T
Collector Current (continuous) at T
Collector Current (pulsed)
Total Dissipation at T
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
600 V
V
CES
V
CE(sat)(25°C)
< 1.9 V
C
CESAT
Parameter
= 25°C
GS
)
= 0)
C
C
50 A
I
= 25°C
= 100°C
C
N-CHANNEL 50A - 600V - TO-247
INTERNAL SCHEMATIC DIAGRAM
PowerMESH™ IGBT
STGW50NB60M
( ) Pulse width limited by safe operating area
–65 to 150
TO-247
Value
600
±20
100
400
250
150
20
50
2
1
2
3
W/°C
Unit
°C
°C
W
V
V
V
A
A
A
1/9

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STGW50NB60M Summary of contents

Page 1

... May 2003 N-CHANNEL 50A - 600V - TO-247 I CE(sat)(25°C) C < 1 CESAT Parameter = 25° 100° 25°C C STGW50NB60M PowerMESH™ IGBT TO-247 INTERNAL SCHEMATIC DIAGRAM Value 600 20 ±20 100 50 400 250 2 –65 to 150 150 ( ) Pulse width limited by safe operating area ...

Page 2

... STGW50NB60M THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max Rthc-h Thermal Resistance Case-heatsink Typ ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Collector-Emitter Breakdown BR(CES) Voltage I Collector cut-off CES ( Gate-Emitter Leakage GES Current ( (1) Symbol Parameter V Gate Threshold Voltage ...

Page 3

... Also the Tail (Jedec Standardization) Test Conditions V = 480 480 125 °C STGW50NB60M Min. Typ. Max. Unit 450 ns 130 ns 410 ns 300 4.1 mJ 730 ns 265 ns 565 ns 440 ns 6 ...

Page 4

... STGW50NB60M Thermal Impedance Output Characteristics Normalized Gate Threshold Voltage vs Temp. 4/9 Switching Off Safe Operating Area Transfer Characteristics Transconductance ...

Page 5

... Collector-Emitter On Voltage vs Temperature Capacitance Variations Total Switching losses vs Gate Resistance Gate-Charge vs Gate-Emitter Voltage Normalized Break-down Voltage vs Temp. Total Switching losses vs Temperature STGW50NB60M 5/9 ...

Page 6

... STGW50NB60M Total Switching losses vs Ic 6/9 Collector-Emitter on Voltage vs Current ...

Page 7

... Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching STGW50NB60M 7/9 ...

Page 8

... STGW50NB60M DIM. MIN. A 4.85 D 2. 15.45 L 19. 14. Dia 3.55 8/9 TO-247 MECHANICAL DATA mm. TYP MAX. 5.15 2.60 0.80 1. 2.40 3.40 10.90 15.75 20.15 4.30 18.50 14.80 34.60 5.50 3 5º 60º 3.65 inch MIN. TYP. 0.19 0.08 0.015 0.04 0.11 0.07 0.07 0.11 0.43 0.60 0.78 0.14 0.72 0.56 1.36 0.21 0.07 5º 60º 0.14 MAX. 0.20 0.10 0.03 0.05 0.09 0.13 0.62 0.79 0.17 0.58 0.11 0.143 ...

Page 9

... The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com STGW50NB60M 9/9 ...

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