SPB80N03S2L-03 SMD Infineon Technologies, SPB80N03S2L-03 SMD Datasheet - Page 3

• Manufacturer Part Number: SPB80N03S2L-03 SMD
• Description: OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1m ?, 80A, LL
• Manufacturer: Infineon Technologies

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
g
C
C
C
R
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
G
(plateau) V
SD
gs
gd
g
rr
Preliminary data
V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
DS
GS
DD
DD
DD
GS
DD
C
GS
R
F
=80A
=40A, R
=25°C
=15V, I
/dt=100A/µs

=0V, V
=15V, V
=24V, I
=24V, I
=0 to 10V
=0V, I
= 24 V , I
2 *I
Conditions
D
*R
F =
G
F
DS
D
D
=80A
=1.1
DS(on)max
GS
l
S
=80A
=80A,
=25V,
D
,
=10V,
=80A


,
min.
93
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SPB80N03S2L-03
SPP80N03S2L-03
Values
6100
2360
11.8
typ.
185
555
105
160
2.5
2.9
99
90
18
51
58
71
1
-
-
2001-04-05
max.
7600 pF
2950
17.7
830
158
148
135
210
320
1.3
23
75
80
72
88
-
-
-
Unit
S


ns
nC
V
A
V
ns
nC