SPB80N03S2L-03 SMD Infineon Technologies, SPB80N03S2L-03 SMD Datasheet - Page 2

• Manufacturer Part Number: SPB80N03S2L-03 SMD
• Description: OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1m ?, 80A, LL
• Manufacturer: Infineon Technologies

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
V
Drain-source on-state resistance
V
V
1 Current limited by bondwire; with a R
and calculated with max. source pin temperature of 85°C.
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm 2 (one layer, 70
drain connection. PCB is vertical without blown air.
3 Diagrams are related to straight lead versions
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
GS
GS
=250µA
=30V, V
=30V, V
=0V, I
=20V, V
=4.5V, I
=4.5V, I
=10V, I
=10V, I
2
cooling area
D
D
D
=1mA
GS
GS
D
D
DS
=80A
=80A,
=80A
=80A,
=0V, T
=0V, T
=0V
SMD version
SMD version
j
j
=25°C
=125°C
2)
GS
= V
thJC
j
DS
= 25 °C, unless otherwise specified
3)
= 0.5 K/W the chip is able to carry I
Preliminary data
Page 2
Symbol
V
V
I
I
R
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
DS(on)
thJC
thJA
thJA
min.
min.
1.2
30

-
-
-
-
-
-
-
-
-
-
-
D
m thick) copper area for
= 255A
Values
Values
SPB80N03S2L-03
0.01
SPP80N03S2L-03
typ.
typ.
1.6
3.2
2.9
2.5
2.2
1
1
-
-
-
-
-
max.
max.
100
100
3.8
3.5
3.1
2.8
0.5
62
62
40
2001-04-05
1
2
-
Unit
V
µA
nA
m
Unit
K/W