SPB80N03S2L-05 SMD Infineon Technologies, SPB80N03S2L-05 SMD Datasheet
SPB80N03S2L-05 SMD
Related parts for SPB80N03S2L-05 SMD
SPB80N03S2L-05 SMD Summary of contents
Page 1
... IEC climatic category; DIN IEC 68-1 Preliminary data product (FOM) DS(on) Ordering Code Symbol puls E AS dv/dt =175°C jmax tot Page 1 SPP80N03S2L-05 SPB80N03S2L-05 Product Summary 5.2 DS(on P-TO263-3-2 P-TO220-3-1 Marking 2N03L05 2N03L05 Value 80 80 320 325 6 ±20 154 -55 ...
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... Diagrams are related to straight lead versions Preliminary data Symbol R thJC R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = V V GS(th DSS I GSS R DS(on DS(on) = 0.97 K/W the chip is able to carry I thJC Page 2 SPP80N03S2L-05 SPB80N03S2L-05 Values Unit min. typ. max 0.97 K Values Unit min. typ. max 1.2 1.6 2 µ ...
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... GS V =24V, I =40A (plateau =25° =0V, I =80A =15V /dt=100A/µ Page 3 SPP80N03S2L-05 SPB80N03S2L-05 Values min. typ. max. 55 110 - , - 2590 3885 pF - 1025 1540 - 205 308 - 1. 7.9 9 ...
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... K 11.0µ 100 µ Page 4 SPP80N03S2L-05 SPB80N03S2L- SPP80N03S2L- 100 120 140 160 ) SPP80N03S2L-05 single pulse - 2001-04-05 °C ...
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... Typ. forward transconductance = f(I g DS(on)max fs parameter: g 140 S 100 Page 5 SPP80N03S2L-05 SPB80N03S2L- SPP80N03S2L- [ 3.5 4.0 4.5 5.0 5.5 6.0 10 100 ); T =25° 100 125 150 175 200 ...
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... Forward character. of reverse diode parameter iss 10 C oss 10 C rss Page 6 SPP80N03S2L-05 SPB80N03S2L- 110 µ max. 2 typ. min -60 - 100 ) µ SPP80N03S2L-05 2 ...
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... Preliminary data 14 Typ. gate charge = parameter 125 145 °C 185 T j 100 140 °C 200 T j Page 7 SPP80N03S2L-05 SPB80N03S2L-05 ) Gate = 40 A pulsed D SPP80N03S2L- 0 max 0 max 110 nC Q Gate ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Preliminary data Page 8 SPP80N03S2L-05 SPB80N03S2L-05 2001-04-05 ...