STP4NA80FI STMicroelectronics, STP4NA80FI Datasheet - Page 2

• Manufacturer Part Number: STP4NA80FI
• Description: N - Channel Enhancement Mode Fast Power MOS Transistor
• Manufacturer: STMicroelectronics

STP4NA80/FI
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
OFF
ON ( )
DYNAMIC
2/10
V
Symbol
Symbol
Symbol
Symbol
R
R
R
R
V
g
(BR)DSS
I
thj-case
t hc-sink
C
thj-amb
I
I
C
E
E
DS(on)
C
GS(th)
D(on)
fs
I
I
DS S
GSS
T
A R
A R
oss
AS
AR
rss
iss
( )
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Repetitive Avalanche Energy
(pulse width limited by T
Avalanche Current, Repetitive or Not-Repetitive
(T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage V
Static Drain-source On
Resistance
On State Drain Current V
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
c
= 100
Parameter
Parameter
Parameter
o
j
DS
C, pulse width limited by T
= 25
= 0)
o
GS
C, I
= 0)
D
= I
j
j
I
V
V
V
V
V
V
V
V
AR
Parameter
max,
max,
D
DS
DS
GS
DS
GS
GS
DS
GS
DS
DS
= 250 A
, V
= V
= 10V I
= 10 V
= 25 V
= Max Rating
= Max Rating x 0.8 T
=
= 10V I
> I
> I
case
DD
D(on)
D(on)
GS
< 1%)
< 1%)
= 50 V)
30 V
= 25
Test Conditions
Test Conditions
Test Conditions
x R
x R
I
j
D
D
D
f = 1 MHz
max,
V
= 250 A
o
= 2 A
= 2 A
DS(on)max
DS(on)max
C unless otherwise specified)
GS
= 0
< 1%)
T
c
Max
Max
Typ
= 100
V
c
I
GS
D
= 125
= 2 A
= 0
o
C
TO-220
o
C
1.13
Min.
Min.
2.25
Min.
800
2.5
4
62.5
300
Max Value
0.5
ISOWATT220
Typ.
Typ.
Typ.
955
105
2.4
4.3
3.1
2.5
24
80
4
3
2.77
Max.
Max.
Max.
1000
1350
3.75
250
150
35
100
3
6
Unit
Unit
Unit
o
o
o
Unit
nA
pF
pF
pF
C/W
C/W
C/W
mJ
mJ
o
V
V
A
S
A
A
A
A
C