STP4NA80FI STMicroelectronics, STP4NA80FI Datasheet

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STP4NA80FI

Manufacturer Part Number
STP4NA80FI
Description
N - Channel Enhancement Mode Fast Power MOS Transistor
Manufacturer
STMicroelectronics
Datasheet

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STP4NA80FI
Manufacturer:
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STP4NA80FI
Manufacturer:
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DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low R
ruggedness and superior switching performance.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
February 1994
STP4NA80
STP4NA80FI
Symbol
I
TYPICAL R
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
LOW INTRINSIC CAPACITANCES
GATE GHARGE MINIMIZED
REDUCED THRESHOLD VOLTAGE SPREAD
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
V
DM
V
V
V
P
T
DGR
30V GATE TO SOURCE VOLTAGE RATING
I
I
T
ISO
DS
GS
stg
D
D
tot
TYPE
( )
j
Drain-source Voltage (V
Drain-gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
DS(on)
DS(on)
800 V
800 V
V
and gate charge, unequalled
= 2.4
DSS
Parameter
R
< 3
< 3
DS(on)
c
GS
= 25
GS
N - CHANNEL ENHANCEMENT MODE
= 20 k )
= 0)
o
C
c
c
FAST POWER MOS TRANSISTOR
2.5 A
4 A
= 25
= 100
I
D
o
C
o
C
o
C
INTERNAL SCHEMATIC DIAGRAM
STP4NA80
TO-220
0.88
110
2.5
16
4
1
-65 to 150
2
Value
3
800
800
150
30
STP4NA80FI
STP4NA80FI
STP4NA80
ISOWATT220
2000
0.36
2.5
1.6
16
45
1
W/
2
Unit
o
o
W
V
V
V
A
A
A
V
3
C
C
o
1/10
C

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STP4NA80FI Summary of contents

Page 1

... A < 100 STP4NA80 STP4NA80FI TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Value STP4NA80 STP4NA80FI 800 800 30 4 2.5 2.5 1 110 45 0.88 0.36 2000 -65 to 150 150 Unit ...

Page 2

STP4NA80/FI THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink t hc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive A R (pulse width ...

Page 3

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter t Turn-on Time d(on) t Rise Time r (di/dt) Turn-on Current Slope on Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symbol Parameter t Off-voltage Rise ...

Page 4

STP4NA80/FI Thermal Impedeance For TO-220 Derating Curve For TO-220 Output Characteristics 4/10 Thermal Impedance For ISOWATT220 Derating Curve For ISOWATT220 Transfer Characteristics ...

Page 5

Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature STP4NA80/FI 5/10 ...

Page 6

STP4NA80/FI Turn-on Current Slope Cross-over Time Accidental Overload Area 6/10 Turn-off Drain-source Voltage Slope Switching Safe Operating Area Source-drain Diode Forward Characteristics ...

Page 7

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time Fig. 2: Unclamped Inductive Waveforms Fig. 4: Gate Charge Test Circuit ...

Page 8

STP4NA80/FI DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 DIA. 3.75 8/10 TO-220 MECHANICAL ...

Page 9

ISOWATT220 MECHANICAL DATA DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.4 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 Ø mm MAX. ...

Page 10

STP4NA80/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from ...

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