M25PE40-VMP6TP Numonyx, B.V., M25PE40-VMP6TP Datasheet - Page 36

• Manufacturer Part Number: M25PE40-VMP6TP
• Description: 4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout
• Manufacturer: Numonyx, B.V.

Instructions
6.12
36/62
Page Erase (PE)
The Page Erase (PE) instruction sets to ‘1’ (FFh) all bits inside the chosen page. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded, the device sets the Write
Enable Latch (WEL).
The Page Erase (PE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address bytes on Serial Data input (D). Any address inside the
page is a valid address for the Page Erase (PE) instruction. Chip Select (S) must be driven
Low for the entire duration of the sequence.
The instruction sequence is shown in
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the Page Erase (PE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Page Erase cycle (whose duration is t
While the Page Erase cycle is in progress, the Status Register may be read to check the
value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-
timed Page Erase cycle, and is 0 when it is completed. At some unspecified time before the
cycle is complete, the Write Enable Latch (WEL) bit is reset.
A Page Erase (PE) instruction applied to a page that is hardware protected is not executed.
Any Page Erase (PE) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
Figure 18. Page Erase (PE) instruction sequence
1. Address bits A23 to A19 are Don’t care.
S
C
D
0
1
2
Instruction
3
4
5
Figure
6
7
MSB
23 22
18.
8
9
24-bit address
2
29 30 31
1
0
AI04046
PE
) is initiated.
M25PE40