M29W800AT-120N6 STMicroelectronics, M29W800AT-120N6 Datasheet
M29W800AT-120N6
Manufacturer Part Number
M29W800AT-120N6
Description
Manufacturer
STMicroelectronics
Datasheet
1.M29W800AB90N1.pdf
(40 pages)
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FEATURES SUMMARY
March 2004
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ
OPERATIONS
ACCESS TIME: 80ns
PROGRAMMING TIME: 10µs typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
–
–
SECURITY PROTECTION MEMORY AREA
INSTRUCTION ADDRESS CODING: 3 digits
MEMORY BLOCKS
–
–
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
–
LOW POWER CONSUMPTION
–
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
–
ELECTRONIC SIGNATURE
–
–
–
Program Byte-by-Byte or Word-by-Word
Status Register bits and Ready/Busy
Output
Boot Block (Top or Bottom location)
Parameter and Main blocks
Read and Program another Block during
Erase Suspend
Stand-by and Automatic Stand-by
Defectivity below 1ppm/year
Manufacturer Code: 20h
Top Device Code, M29W800AT: D7h
Bottom Device Code, M29W800AB: 5Bh
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
Figure 1. Packages
Figure 2. Logic Diagram
A0-A18
RP
W
G
E
12 x 20mm
TSOP48 (N)
19
M29W800AB
M29W800AT
V CC
V SS
SO44 (M)
M29W800AB
M29W800AT
8 x 6 solder balls
TFBGA48 (ZA)
15
DQ0-DQ14
DQ15A–1
BYTE
RB
FBGA
AI02599
1/40