M29W800AT STMICROELECTRONICS [STMicroelectronics], M29W800AT Datasheet

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M29W800AT

Manufacturer Part Number
M29W800AT
Description
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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FEATURES SUMMARY
March 2004
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ
OPERATIONS
ACCESS TIME: 80ns
PROGRAMMING TIME: 10µs typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
SECURITY PROTECTION MEMORY AREA
INSTRUCTION ADDRESS CODING: 3 digits
MEMORY BLOCKS
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
LOW POWER CONSUMPTION
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
ELECTRONIC SIGNATURE
Program Byte-by-Byte or Word-by-Word
Status Register bits and Ready/Busy
Output
Boot Block (Top or Bottom location)
Parameter and Main blocks
Read and Program another Block during
Erase Suspend
Stand-by and Automatic Stand-by
Defectivity below 1ppm/year
Manufacturer Code: 20h
Top Device Code, M29W800AT: D7h
Bottom Device Code, M29W800AB: 5Bh
8 Mbit (1Mb x8 or 512Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
Figure 1. Packages
Figure 2. Logic Diagram
A0-A18
RP
W
G
E
12 x 20mm
TSOP48 (N)
19
M29W800AB
M29W800AT
V CC
V SS
SO44 (M)
M29W800AB
M29W800AT
8 x 6 solder balls
TFBGA48 (ZA)
15
DQ0-DQ14
DQ15A–1
BYTE
RB
FBGA
AI02599
1/40

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M29W800AT Summary of contents

Page 1

... YEARS DATA RETENTION – Defectivity below 1ppm/year ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M29W800AT: D7h – Bottom Device Code, M29W800AB: 5Bh March 2004 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory Figure 1. Packages ...

Page 2

... Command Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 3. TSOP Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 4. SO Connections Figure 5. TFBGA Connections (Top view through package Table 2. Top Boot Block Addresses, M29W800AT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Table 3. Bottom Boot Block Addresses, M29W800AB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Address Inputs (A0-A18 Data Input/Outputs (DQ0-DQ7 Data Input/Outputs (DQ8-DQ14 and DQ15A–1 Chip Enable (E) ...

Page 3

... Table 19. Write AC Characteristics, E Controlled ( 70°C, –20 to 85°C or –40 to 85° Table 20. Write AC Characteristics, E Controlled ( 70°C, –20 to 85°C or –40 to 85° Figure 9. Write AC Waveforms, W Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Figure 10.Write AC Waveforms, E Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 ( ° MHz 2.7V to 3.6V M29W800AT, M29W800AB 3/40 ...

Page 4

... M29W800AT, M29W800AB Figure 11.Read and Write AC Characteristics, RP Related . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Figure 12.Data Polling and Toggle Bit AC Characteristics ( 70°C, –20 to 85°C or –40 to 85° Table 21. Data Polling and Toggle Bit AC Characteristics ( 70°C, –20 to 85°C or –40 to 85° Figure 13 ...

Page 5

... KWords, two Parameter Blocks of 8 KBytes or 4 KWords, one Main Block of 32 KBytes or 16 KWords and fifteen Main Blocks of 64 KBytes or 32 KWords. The M29W800AT has the Boot Block at the top of the memory address space and the M29W800AB locates the Boot Block starting at the bottom ...

Page 6

... M29W800AT, M29W800AB Command Interface Instructions, made up of commands written in cy- cles, can be given to the Program/Erase Controller through a Command Interface (C.I.). For added data protection, program or erase execution starts after cycles. The first, second, fourth and fifth cycles are used to input Coded cycles to the C ...

Page 7

... A17 A18 NC A10 A11 DQ0 DQ2 DQ5 DQ7 DQ8 DQ10 DQ12 DQ14 DQ9 DQ11 V CC DQ13 DQ1 DQ3 DQ4 DQ6 M29W800AT, M29W800AB 6 A13 A12 A14 A15 A16 BYTE DQ15 A– AI00656 7/40 ...

Page 8

... M29W800AT, M29W800AB Table 2. Top Boot Block Addresses, M29W800AT Size Address Range # (Kbytes) (x8 FC000h-FFFFFh 17 8 FA000h-FBFFFh 16 8 F8000h-F9FFFh 15 32 F0000h-F7FFFh 14 64 E0000h-EFFFFh 13 64 D0000h-DFFFFh 12 64 C0000h-CFFFFh 11 64 B0000h-BFFFFh 10 64 A0000h-AFFFFh 9 64 90000h-9FFFFh 8 64 80000h-8FFFFh 7 64 70000h-7FFFFh 6 64 60000h-6FFFFh 5 64 50000h-5FFFFh 4 64 ...

Page 9

... V Supply Voltage. The power supply for all CC operations (Read, Program and Erase). V Ground measurements. M29W800AT, M29W800AB . When the reset pulse is giv- PLPX during which the RB signal will be held PLYH . The end of the memory reset will be indicat- 15 and 16, Read AC Charac- Figure 13., Data Polling DQ7 AC ...

Page 10

... The manufacturer's code for STMicro- electronics is 20h, the device code is D7h for the M29W800AT (Top Boot) and 5Bh for the M29W800AB (Bottom Boot). These codes allow programming equipment or applications to auto- matically match their interface to the characteris- tics of the M29W800A ...

Page 11

... M29W800AT, M29W800AB DQ0- DQ8- DQ7 DQ14 Data Data A12 A15 Output Output Data A12 A15 Hi-Z Output Data Data A12 A15 Input Input Data A12 A15 Hi-Z Input ...

Page 12

... M29W800AT, M29W800AB INSTRUCTIONS AND COMMANDS The Command Interface latches commands writ- ten to the memory. Instructions are made up from one or more commands to perform Read Memory Array, Read Electronic Signature, Read Block Pro- tection, Program, Block Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made of address and data sequences ...

Page 13

... It will result in both DQ2 and DQ6 toggling when the data is being programmed. Erase Resume (ER) Instruction. If Suspend instruction was previously executed, the erase operation may be resumed by giving the command 30h, at any address, and without any Coded cycles. M29W800AT, M29W800AB Block an Erase 13/40 ...

Page 14

... M29W800AT, M29W800AB (1) Table 8. Instructions Mne. Instr. Cyc. Addr. 1+ Data Read/Reset (2,4) Memory RD Addr. Array (3,7) 3+ Data Addr. (3,7) (4) Auto Select 3+ AS Data Addr. (3,7) PG Program 4 Data Addr. (3,7) BE Block Erase 6 Data Addr. (3,7) CE Chip Erase 6 Data Addr. Erase (10 Suspend Data Addr. Erase ER 1 Resume Data Note: 1. Commands not interpreted in this table will default to read array mode. ...

Page 15

... DQ5 is set to '1', DQ2 will toggle if the faulty block is addressed. Table 9. Polling and Toggle Bits Program Erase Erase Suspend Read (in Erase Suspend block) Erase Suspend Read (outside Erase Suspend block) Erase Suspend Program M29W800AT, M29W800AB and Waveforms. Mode DQ7 DQ6 DQ7 Toggle 0 Toggle 1 1 ...

Page 16

... M29W800AT, M29W800AB Table 10. Status Register Bits DQ Name Logic Level ’1’ ’0’ Data 7 Polling DQ DQ ’-1-0-1-0-1-0-1-’ Toggle Bit ’-1-1-1-1-1-1-1-’ ’1’ 5 Error Bit ’0’ 4 Reserved ’1’ Erase 3 Time Bit ’0’ ’-1-0-1-0-1-0-1-’ 2 Toggle Bit ...

Page 17

... Refer also to the STMicroelectronics SURE Program and other relevant qual- ity documents. 2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions. 3. Depends on range. (1) Parameter (3) M29W800AT, M29W800AB Value Unit – °C –50 to 125 °C – ...

Page 18

... M29W800AT, M29W800AB DC AND AC CHARACTERISTICS Figure 6. AC Testing Input Output Waveform 3V 0V Table 12. AC Measurement Conditions Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages (1) Table 13. Capacitance (T A Symbol Parameter C Input Capacitance IN C Output Capacitance OUT Note: 1. Sampled only, not 100% tested. ...

Page 19

... IL 500 - t after the falling edge of E without increasing t GLQV M29W800AT, M29W800AB M29W800AT / M29W800AB 3. 2. 30pF CL = 30pF Max Min Max ...

Page 20

... IL 500 - t after the falling edge of E without increasing t GLQV M29W800AT / M29W800AB 100 120 = 2. 2. 30pF CL = 100pF Max Min Max 120 100 120 ...

Page 21

... Figure 8. Read Mode AC Waveforms M29W800AT, M29W800AB 21/40 ...

Page 22

... Note: 1. Sampled only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. 22/40 Parameter V = 3. 30pF Min 500 ID 4 500 M29W800AT / M29W800AB 2. 30pF Max Min Max 500 4 500 ...

Page 23

... This timing is for Temporary Block Unprotection operation. Parameter V = 2. 30pF Min 100 500 ID 4 500 M29W800AT, M29W800AB M29W800AT / M29W800AB 100 120 V = 2. 100pF Max Min Max 120 500 4 500 ...

Page 24

... Note: 1. Sampled only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. 24/40 Parameter V = 3. 30pF Min 500 ID 4 500 50 0 M29W800AT / M29W800AB 2. 30pF Max Min Max 500 4 500 ...

Page 25

... This timing is for Temporary Block Unprotection operation. Parameter V = 2. 30pF Min 100 500 ID 4 500 50 0 M29W800AT, M29W800AB M29W800AT / M29W800AB 100 120 V = 2. 100pF Max Min Max 120 500 4 500 ...

Page 26

... M29W800AT, M29W800AB Figure 9. Write AC Waveforms, W Controlled A0-A18/ A– DQ0-DQ7/ DQ8-DQ15 V CC tVCHEL RB Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W. 26/40 tAVAV VALID tAVWL tELWL tGHWL tWLWH tDVWH tWLAX tWHEH tWHGL tWHWL tWHDX VALID tWHRL ...

Page 27

... Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E. Figure 11. Read and Write AC Characteristics, RP Related tAVAV VALID tAVEL tWLEL tGHEL tELEH tDVEH tPHEL tPHWL tPLPX tPLYH M29W800AT, M29W800AB tELAX tEHWH tEHGL tEHEL tEHDX VALID tEHRL tPHPHH AI02184 AI02091 27/40 ...

Page 28

... 30pF CL = 30pF Min Max Min Max 10 2400 10 2400 1.0 60 1.0 10 2400 10 2400 1 2400 10 2400 1.0 60 1.0 10 2400 10 2400 1.0 60 1.0 (1) M29W800AT / M29W800AB 100 120 = 2. 2. 30pF CL = 100pF Min Max Min Max 10 2400 10 2400 1.0 60 1.0 10 2400 10 2400 1 2400 10 2400 1.0 60 1.0 10 ...

Page 29

... Figure 13. Data Polling DQ7 AC Waveforms M29W800AT, M29W800AB 29/40 ...

Page 30

... M29W800AT, M29W800AB Figure 14. Data Toggle DQ6, DQ2 AC Waveforms 30/40 ...

Page 31

... CC (1) Chip Program (Byte) (1) Chip Program (Word) Byte/Word Program Program/Erase Cycles (per Block) Note: 1. Excluded the time required to execute bus cycles sequence for program operation. Figure 16. Data Toggle Flowchart PASS AI01369 M29W800AT / M29W800AB Min Typ = 2.7V 1 100,000 M29W800AT, M29W800AB START READ DQ2, DQ5 & ...

Page 32

... M29W800AT, M29W800AB POWER SUPPLY Power Up The memory Command Interface is reset on pow Read Array. The device does not accept commands on the first rising edge both W and E are at V with Any write cycle initiation is blocked when V below V . LKO 32/40 Supply Rails Normal precautions must be taken for supply volt- age decoupling ...

Page 33

... Cyc. (1) AAh Addr. Read OTP Data until a new write cycle is initiated. (2) B8h Data BYTE Organisation (x8) Security WORD Organisation (x16) Security M29W800AT, M29W800AB 2nd Cyc. BOTTOM BOOT BLOCK 0E0FFh Security Memory Block 0E000h BOTTOM BOOT BLOCK 0E01Fh Security Memory Block 0E000h ...

Page 34

... M29W800AT, M29W800AB PACKAGE MECHANICAL Figure 18. TSOP48, 48 Lead Plastic Thin Small Outline, 12x20 mm - Package Outline DIE Table 24. TSOP48, 48 Lead Plastic Thin Small Outline, 12x20 mm - Package Mechanical Data Symbol Typ A A1 0.100 A2 1.000 B 0.220 12.000 E 20.000 E1 18.400 e 0.500 L 0.600 L1 0.800 ...

Page 35

... M29W800AT, M29W800AB ddd A2 BGA-Z00 inches Typ Min 0.0472 0.0079 0.0394 0.0157 0.0138 0.0177 0.2362 0.2323 0.2402 0.1575 – 0.0039 0.3543 0.3504 ...

Page 36

... M29W800AT, M29W800AB Figure 20. TFBGA48 Daisy Chain Connections (Top view through package Figure 21. TFBGA48 Daisy Chain - PCB Connections (Top view through package) START POINT 36/ AI04893 6 END POINT AI04892 ...

Page 37

... L 0. millimeters Min Max 2.80 0.10 2.20 2.40 0.35 0.50 0.10 0.20 0.08 28.00 28.40 13.20 13.50 15.75 16.25 – – 8 M29W800AT, M29W800AB SO-d inches Typ Min 0.1102 0.0039 0.0906 0.0866 0.0945 0.0157 0.0138 0.0197 0.0059 0.0039 0.0079 0.0030 1.1102 1.1024 1.1181 0.5236 0.5197 0.5315 0.6299 0.6201 0.6398 0.0500 – 0.0315 44 Max – ...

Page 38

... M29W800AT, M29W800AB PART NUMBERING Table 27. Ordering Information Scheme Example: Device Type M29 Operating Voltage W = 2.7 to 3.6V Device Function 800A = 8 Mbit (1Mb x8 or 512Kb x16), Boot Block Array Matrix T = Top Boot B = Bottom Boot Speed 100 = 100 ns 120 = 120 ns Package N = TSOP48 SO44 ZA = TFBGA48: 0 ...

Page 39

... Daisy Chain commercial code defined (Table 28) 6/21/01 -06 TFBGA48 Daisy Chain diagrams, Package and PCB Connections added (Figure and 21) 24-Jan-2002 -07 -90 version changed to Vcc=2.7 to 3.6V; -120 version changed to CL=100pF INSTRUCTIONS AND COMMANDS 09-Mar-2004 8.0 Erase Suspend (ES) instructions updated. M29W800AT, M29W800AB Description section: description of Block Erase (BE) and 20 39/40 ...

Page 40

... M29W800AT, M29W800AB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequ of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are s to change without notice ...

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