BFG196 Infineon Technologies AG, BFG196 Datasheet
Home In Stock Infineon Technologies AG BFG196
Manufacturer Part Number
BFG196
Manufacturer
Infineon Technologies AG
Available stocks
NPN Silicon RF Transistor
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Thermal Resistance
Type
BFG196
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Junction temperature
Ambient temperature
Storage temperature
Junction - soldering point
Total power dissipation
T
1 T
2 For calculation of R
For low noise, low distortion broadband
Power amplifier for DECT and PCN Systems
f
S
amplifiers in antenna and telecommunication
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
F = 1.5 dB at 900 GHz
T
S
= 7.5 GHz
is measured on the collector lead at the soldering point to the pcb
90 °C
1)
thJA
please refer to Application Note Thermal Resistance
Marking
BFG196
2)
1 = E
Pin Configuration
2 = B
1
R
Symbol
V
V
V
V
I
I
P
T
T
T
C
B
j
A
stg
CEO
CES
CBO
EBO
tot
thJS
3 = E
4
4 = C
-65 ... 150
-65 ... 150
Value
100
800
150
12
20
20
12
2
75
Package
SOT223
1
Jun-27-2001
BFG196
2
VPS05163
Unit
K/W
V
mA
mW
°C
3
Related parts for BFG196
BFG196 Summary of contents
... Application Note Thermal Resistance thJA Pin Configuration Symbol V CEO V CES V CBO V EBO tot stg R thJS 1 BFG196 VPS05163 Package SOT223 Value Unit 100 mA 12 800 mW 150 °C -65 ... 150 -65 ... 150 K/W 75 Jun-27-2001 ...
... CB E Emitter-base cutoff current current gain mA 25°C, unless otherwise specified. A Symbol V (BR)CEO I CES I CBO I EBO BFG196 Values Unit min. typ. max 100 µ 100 µA 50 100 200 - Jun-27-2001 ...
... 900 MHz f = 1.8 GHz (k-(k - 25°C, unless otherwise specified. A Symbol Sopt Sopt L Lopt |S 21e = 1 BFG196 Values min. typ. max 0.97 1 Jun-27-2001 Unit GHz pF dB ...
... S 120 °C 100 150 Permissible Pulse Load thJS p P totmax totDC 0.005 0.01 0.02 0.05 1 0.1 0.2 0 Jun-27-2001 BFG196 - ...
... Power Gain 1.8GHz V = Parameter 0. 120 10V f Jun-27-2001 BFG196 0.7V mA 120 0.7V mA 120 I C ...
... Power Gain | 10V 0 1V 0.7V -5 2.5 GHz 3 f(f) 21 Parameter I =50mA C 0.5 1.0 1.5 2.0 2.5 Jun-27-2001 BFG196 =f 120 I C 10V 1V 0.7V GHz 3.5 f ...
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