BSP322P Infineon Technologies, BSP322P Datasheet - Page 6

• Manufacturer Part Number: BSP322P
• Manufacturer: Infineon Technologies

Specifications of BSP322P

• Package: SOT-223
• Vds (max): -100.0 V
• Rds (on) (max) (@10v): 800.0 mOhm
• Rds (on) (max) (@4.5v): 1,000.0 mOhm
• Rds (on) (max) (@2.5v): -

Rev 1.04
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
1.5
0.5
10
10
10
DS
=f(T
2
1
0
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=-1 A; V
20
typ.
20
GS
40
=-10 V
-V
T
j
DS
[°C]
Ciss
Coss
98 %
Crss
60
[V]
60
100
80
140
100
page 6
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
0.01
0.1
10
=f(T
SD
1
3
2
1
0
-60
)
0
j
); V
j
GS
-20
=V
DS
0.5
20
; I
150 °C, typ
D
=-380 µA
-V
min.
T
max.
typ.
SD
j
60
[°C]
[V]
150 °C, 98%
25 °C, 98%
100
1
25 °C, typ
140
BSP322P
2011-04-05
180
1.5