BSP322P Infineon Technologies, BSP322P Datasheet - Page 2

• Manufacturer Part Number: BSP322P
• Manufacturer: Infineon Technologies

Specifications of BSP322P

• Package: SOT-223
• Vds (max): -100.0 V
• Rds (on) (max) (@10v): 800.0 mOhm
• Rds (on) (max) (@4.5v): 1,000.0 mOhm
• Rds (on) (max) (@2.5v): -

Rev 1.04
1)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
minimal footprint,
steady state
6 cm
steady state
V
V
V
T
V
T
V
V
V
I
|V
I
D
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=-0.93 A
=-0.8 A
DS
=V
=-100 V, V
=-100 V, V
=0 V, I
=-20 V, V
=-10 V, I
=-4.5 V,
|>2|I
2
cooling area
GS
,I
D
2
|R
D
D
(one layer, 70 µm thick) copper area for drain
=-250 μA
=-380 µA
D
DS(on)max
DS
=-1 A
GS
GS
=0 V
=0 V,
=0 V,
1)
,
,
min.
-100
-2.0
0.7
-
-
-
-
-
-
-
Values
typ.
-1.5
-0.1
600
808
-10
-10
1.4
-
-
-
max.
1000
-100
-100
-1.0
115
800
70
-1
-
-
BSP322P
Unit
K/W
V
µA
nA
mΩ
S
2011-04-05