2N7002DW Infineon Technologies, 2N7002DW Datasheet - Page 7

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2N7002DW

Manufacturer Part Number
2N7002DW
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of 2N7002DW

Package
SOT-363 dual
Vds (max)
60.0 V
Rds (on) (max) (@10v)
3,000.0 mOhm
Rds (on) (max) (@4.5v)
4,000.0 mOhm
Rds (on) (max) (@2.5v)
-

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Rev.2.2
13Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
10
10
10
10
70
65
60
55
50
AV
-1
-2
-3
0
-40
=f(T
10
); R
0
j
); I
J(start)
GS
D
=25 Ω
=250 µA
0
10
1
125 °C
40
T
t
AV
j
[°C]
[µs]
100 °C
80
10
2
25 °C
120
160
10
page 7
3
14 Typ. gate charge
V
parameter: V
GS
=f(Q
10
9
8
7
6
5
4
3
2
1
0
0
gate
); I
DD
D
=0.5 A pulsed
0.1
12 V
0.2
Q
gate
30 V
[nC]
48 V
0.3
2N7002DW
0.4
2011-06-16
0.5

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