2N7002DW Infineon Technologies, 2N7002DW Datasheet - Page 6

no-image

2N7002DW

Manufacturer Part Number
2N7002DW
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of 2N7002DW

Package
SOT-363 dual
Vds (max)
60.0 V
Rds (on) (max) (@10v)
3,000.0 mOhm
Rds (on) (max) (@4.5v)
4,000.0 mOhm
Rds (on) (max) (@2.5v)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N7002DW
Manufacturer:
FSC
Quantity:
39 000
Part Number:
2N7002DW
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
2N7002DW
Quantity:
24 000
Company:
Part Number:
2N7002DW
Quantity:
15 000
Company:
Part Number:
2N7002DW H6327
Quantity:
4 800
Part Number:
2N7002DW L6327
Manufacturer:
Infineon Technologies
Quantity:
1 788
Part Number:
2N7002DW-7-F
Manufacturer:
DIODES
Quantity:
36 000
Part Number:
2N7002DW-7-F
Manufacturer:
DIO
Quantity:
255 000
Part Number:
2N7002DW-7-F
Manufacturer:
DIODES
Quantity:
2 774
Part Number:
2N7002DW-7-F
Manufacturer:
DIODES
Quantity:
120
Part Number:
2N7002DW-7-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Company:
Part Number:
2N7002DW-7-F
Quantity:
5 000
Company:
Part Number:
2N7002DW-7-F
Quantity:
120 000
Part Number:
2N7002DW-TP
Manufacturer:
MCC原装
Quantity:
20 000
Part Number:
2N7002DW1T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
2N7002DWA-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Rev.2.2
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
10
10
DS
=f(T
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz; T
-20
=0.3 A; V
10
20
98 %
GS
V
T
=10 V
DS
j
[°C]
[V]
60
j
typ
=25°C
20
100
Coss
140
Ciss
Crss
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
3.2
2.8
2.4
1.6
1.2
0.8
0.4
10
=f(T
SD
2
0
-1
-2
-3
0
-60
)
0
j
); V
D
j
DS
-20
=V
0.4
GS
; I
20
D
150 °C
=250 µA
V
T
SD
j
0.8
[°C]
25 °C
60
[V]
2 %
98 %
typ
25 °C, 98%
100
1.2
150 °C, 98%
2N7002DW
140
2011-06-16
1.6

Related parts for 2N7002DW