TLE 7810G Infineon Technologies, TLE 7810G Datasheet - Page 50

• Manufacturer Part Number: TLE 7810G
• Manufacturer: Infineon Technologies

Specifications of TLE 7810G

• Packages: PG-DSO-28
• Flash: 16.0 kByte
• Frequency (f): 24.0 MHz
• High Side Switch: 1
• High Voltage Monitor Input: 5
• Gpio: 8

18.3
For flash programming the transmission rate of the integrated LIN transceiver can be changed to maximum
115 kBaud via SPI command. A dedicated BROM routine of the XC866 takes care of periodically servicing the
watchdog during this LIN-Fast-Mode. Further details are available in the XC866 User’s Manual.
Figure 20
18.4
T
•
•
•
•
•
•
The total power dissipation can be calculated from:
P
18.5
Tests for ESD robustness according to IEC61000-4-2 “gun test” (150pF, 330Ω) have been performed. The results
and test condition are available in a test report.
Table 15
Performed Test
ESD at pin LIN, V
ESD at pin LIN, V
1) ESD susceptibility “ESD GUN” according LIN EMC 1.3 Test Specification, Section 4.3. (IEC 61000-4-2) -Tested by external
Data Sheet
LIN FLASH mode on
LIN FLASH mode off
J
D
=
=
T
T
P
P
P
R
test house (IBEE Zwickau, EMC Test report Nr. ).
T
J
A
D
INT
IO
thJA
P
A
= Junction temperature [°C]
= Ambient temperature [°C]
= Total chip power dissipation [W]
INT
= Power dissipation caused by I/O currents [W]
+ (
= Chip internal power dissipation [W]
= Package thermal resistance [K/W]; junction-ambient
+
P
P
D
Input Data
Flash Program Mode via LIN-Fast-Mode
LIN Flash mode SPI command
Thermal Resistance
ESD Tests
ESD “GUN test”
IO
×
R
S
S
, MON4 versus GND
, MON4 versus GND
thJA
)
MSB
15 14 13 12 11 10
1
0
0
0
0
0
0
0
≥ +8
≤ -8
Result
0
0
0
0
50
Unit
kV
kV
9
0
0
8
0
0
Remarks
1)
1)
Positive pulse
Negative pulse
7
0
0
6
0
0
5
0
0
4
1
1
Application Information
Rev. 3.01, 2008-04-15
3
0
0
2
0
0
TLE7810G
1
0
0
LSB
0
0
0
(8)
(9)