T860N Infineon Technologies, T860N Datasheet - Page 8

• Manufacturer Part Number: T860N
• Manufacturer: Infineon Technologies

Specifications of T860N

• Vdrm/ Vrrm (v): 3,200.0 - 3,600.0 V
• Itsm: 17,000.0 A
• Itavm: 860 (180 ° el sin)
• Housing: Disc dia 75mm height 26mm / Ceramic
• Configuration: Phase Control Thyristors / SCR

IFBIP D AEC / 2009-03-16, H.Sandmann
N
Phase Control Thyristor
0,1
10000
10
1000
1
10
Netz-Thyristor
1
Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation P
Steuercharakteristik v
Gate characteristic v
Sperrverzögerungsladung / Recovered charge Q
Datenblatt / Data sheet
a - 20W / 10ms
Parameter: Durchlassstrom / On-state current i
100
T
vj
= T
Steuerkennlinie
vjmax
Zündverzug
G
, v
G
= f (i
= f (i
R
T860N
b - 40W / 1ms
≤ 0,5 V
G
A 14/09
G
) with triggering area for V
i
) mit Zündbereichen für V
G
[mA]
RRM
10
, V
RM
c - 60W / 0,5ms
= 0,8 V
RRM
1000
r
= f(di/dt)
TM
D
D
= 12 V
= 12 V
-di/dt [A/µs]
i
T M
= 2000A
Seite/page
GM
= f (t
1000A
200A
100A
500A
a
50A
g
) :
b
c
10000
8/10
100