CM800HG-90R Powerex Inc, CM800HG-90R Datasheet - Page 6

• Manufacturer Part Number: CM800HG-90R
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM800HG-90R

• Prx Availability: RequestQuote
• Voltage: 4500V
• Current: 800A
• Circuit Configuration: Single
• Rohs Compliant: No

4
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1000
10
HALF-BRIDGE SWITCHING ENERGY
100
8
6
4
2
0
CAPACITANCE CHARACTERISTICS
10
0
1
CHARACTERISTICS (TYPICAL)
0.1
V
R
L
Inductive load
S
CC
G(on)
= 150nH, Tj = 125°C
= 2800V, V
V
f = 100kHz
= 4.0Ω, R
GE
Collector-Emitter Voltage [V]
400
= 0V, Tj = 25°C
Collector Current [A]
(TYPICAL)
GE
G(off)
= ±15V
1
= 15Ω
800
10
1200
C
C
C
oes
res
ies
E
1600
E
E
rec
100
on
off
-10
-15
8
6
4
2
0
20
15
10
HALF-BRIDGE SWITCHING ENERGY
GATE CHARGE CHARACTERISTICS
-5
5
0
0
0
CHARACTERISTICS (TYPICAL)
V
V
Tj = 125°C, Inductive load
CC
GE
= 2800V, I
= ±15V, L
V
T
j
CE
= 25°C
= 2800V, I
2
2
S
E
E
C
Gate resistor [Ohm]
= 150nH
on
rec
= 800A
(TYPICAL)
Gate Charge [µC]
CM800HG-90R
C
= 800A
4
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
4
6
6
HVM-1062
INSULATED TYPE
8
8
6 of 8
1
1
0
0