CM800HG-90R Powerex Inc, CM800HG-90R Datasheet - Page 3

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CM800HG-90R

Manufacturer Part Number
CM800HG-90R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM800HG-90R

Prx Availability
RequestQuote
Voltage
4500V
Current
800A
Circuit Configuration
Single
Rohs Compliant
No
4
t
t
E
E
V
t
I
Q
E
E
THERMAL CHARACTERISTICS
R
R
R
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
d(off)
f
rr
rr
th
off(10%)
off
EC
rec(10%)
rec
th(j-c)Q
th(j-c)D
th(c-s)
rr
Symbol
Symbol
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Turn-off switching energy
Emitter-collector voltage
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
Reverse recovery energy
Thermal resistance
Thermal resistance
Contact thermal resistance
Item
Item
(Note 5)
(Note 6)
(Note 2)
(Note 2)
(Note 2)
(Note 5)
(Note 6)
(Note 2)
(Note 2)
(Note 2)
V
I
V
R
L
Inductive load
I
V
V
I
V
R
L
Inductive load
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Heat sink, λ
C
E
C
s
s
CC
GE
G(off)
GE
CC
GE
G(on)
= 800 A
= 800 A
= 800 A
= 150 nH
= 150 nH
= 2800 V
= ±15 V
= 0 V
= 2800 V
= ±15 V
= 15 Ω
= 4.0 Ω
(Note 4)
Conditions
Conditions
grease
= 1W/m·K, D
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
(c-s)
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 100 µm
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
Min
Min
CM800HG-90R
Limits
Limits
1150
3.60
3.80
0.35
0.45
1.95
2.60
2.15
2.90
2.50
2.80
0.70
0.90
0.95
1.50
1.10
1.70
Typ
800
870
740
Typ
9.0
HVM-1062
INSULATED TYPE
5.00
1.00
3.40
16.0
Max
Max
29.5
3 of 8
K/kW
K/kW
K/kW
Unit
Unit
µC
µs
µs
µs
V
A
J
J
J
J

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