CM800HG-90R Powerex Inc, CM800HG-90R Datasheet

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CM800HG-90R

Manufacturer Part Number
CM800HG-90R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM800HG-90R

Prx Availability
RequestQuote
Voltage
4500V
Current
800A
Circuit Configuration
Single
Rohs Compliant
No
4
CM800HG-90R
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
Prepared by
Approved by
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
S. Iura
H. Yamaguchi : Jul. 2010
Revision: 1.0
● I
● V
● 1-element in a Pack
● High Insulated Type
● LPT-IGBT / Soft Recovery Diode
● AlSiC Baseplate
C
CES
………………………
……………………
NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC WRITTEN
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
CM800HG-90R
PERMISSION OF MITSUBISHI ELECTRIC CORPORATION
COMPANY PROPRIETARY
HVM-1062
800 A
4500 V
INSULATED TYPE
Dimensions in mm
1 of 8
CONFIDENTIAL

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CM800HG-90R Summary of contents

Page 1

... APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES MITSUBISHI HVIGBT MODULES CM800HG-90R HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC WRITTEN PERMISSION OF MITSUBISHI ELECTRIC CORPORATION ● ...

Page 2

... R = 4.0 Ω 25°C G(on) j (Note 150 125° Inductive load T = 25°C j (Note 125°C j MITSUBISHI HVIGBT MODULES CM800HG-90R HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 4500 V 4400 ± 800 A 1600 A 800 A 1600 A 7800 W 10200 V 5100 V − ...

Page 3

... T = 125°C j Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Heat sink, λ = 1W/m· 100 µm grease (c-s) MITSUBISHI HVIGBT MODULES CM800HG-90R HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — 3.60 — µs — 3.80 5.00 — ...

Page 4

... M4: Auxiliary terminals screw T = 25° 25° does not exceed T j rating (150°C). jmax x 0. according to IEC 60747. rec MITSUBISHI HVIGBT MODULES CM800HG-90R HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max 7.0 — 22.0 N·m 3.0 — 6.0 N·m 1.0 — ...

Page 5

... GE 400 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 1600 1200 T = 125°C j 800 400 MITSUBISHI HVIGBT MODULES CM800HG-90R HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 125° 25° Gate - Emitter Voltage [ 25° 125°C ...

Page 6

... C res -15 10 100 HALF-BRIDGE SWITCHING ENERGY off rec 0 1200 1600 0 MITSUBISHI HVIGBT MODULES CM800HG-90R HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 2800V 800A 25° Gate Charge [µC] CHARACTERISTICS (TYPICAL 2800V 800A CC ...

Page 7

... REVERSE BIAS SAFE OPERATING AREA 10000 2500 2000 I 1000 rr 1500 1000 100 t rr 500 10 0 10000 MITSUBISHI HVIGBT MODULES CM800HG-90R HIGH POWER SWITCHING USE INSULATED TYPE V = 2800V ±15V 4.0Ω 15Ω G(on) G(off 150nH 125°C S Inductive load t d(off) t ...

Page 8

... − [K/kW [sec MITSUBISHI HVIGBT MODULES CM800HG-90R HIGH POWER SWITCHING USE INSULATED TYPE ≤ 3200V, di/dt < 4kA/µ 125°C 1000 2000 3000 4000 5000 Emitter-Collector Voltage [V] ⎧ ⎫ ⎛ ⎞ t ⎜ ⎟ n ⎪ ...

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