CM800E6C-66H Powerex Inc, CM800E6C-66H Datasheet - Page 6

• Manufacturer Part Number: CM800E6C-66H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM800E6C-66H

• Voltage: 3300V
• Current: 800A
• Circuit Configuration: Chopper
• Rohs Compliant: No

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
10
10
10
1.2
1.0
0.8
0.6
0.4
0.2
-1
0
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
10
10
-3
1
Single Pulse, T
R
R
V
R
T
j
2 3 5 7
SWITCHING TIME CHARACTERISTICS
CC
G(on)
th(j–c)Q
th(j–c)R
= 125 C, Inductive load
2 3
= 1650V, V
IMPEDANCE CHARACTERISTICS
= R
COLLECTOR CURRENT ( A )
= 13K/kW
= 25K/kW
t
t
5 7
d(off)
d(on)
10
TRANSIENT THERMAL
G(off)
-2
10
2 3 5 7
HALF-BRIDGE
C
2
= 2.5
GE
( TYPICAL )
= 25 C
TIME ( s )
2 3
= 15V
10
-1
5 7
2 3 5 7
10
3
10
2 3
0
t
t
r
f
2 3 5 7
5 7
10
10
4
1
10
10
10
10
-1
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
10
REVERSE RECOVERY CHARACTERISTICS
1
V
R
T
j
CC
G(on)
= 125 C, Inductive load
2 3
= 1650V, V
= R
l
t
rr
rr
5 7
EMITTER CURRENT ( A )
G(off)
FREE-WHEEL DIODE
10
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
2
= 2.5
GE
( TYPICAL )
2 3
= 15V
CM800E6C-66H
5 7
10
3
INSULATED TYPE
2 3
5 7
10
Jul. 2005
10
10
10
10
4
7
5
3
2
7
5
3
2
7
5
3
2
4
3
2
1