CM800E6C-66H Powerex Inc, CM800E6C-66H Datasheet - Page 2

• Manufacturer Part Number: CM800E6C-66H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM800E6C-66H

• Voltage: 3300V
• Current: 800A
• Circuit Configuration: Chopper
• Rohs Compliant: No

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Note 1. Pulse width and repetition rate should be such that junction temperature (T
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
V
V
I
I
I
I
P
T
T
T
V
t
I
V
I
V
C
C
C
Q
V
t
t
E
t
t
E
t
Q
E
V
t
Q
E
C
CM
psc
CES
GES
d(on)
r
d(off)
f
rr
rr
E (Note 2)
EM(Note 2)
Symbol
Symbol
op
GES
j
stg
CES
C (Note 3)
iso
GE(th)
CE(sat)
ies
oes
res
EC(Note 2)
on
off
rec (Note 2)
F (Note 5)
rec (Note 5)
g
rr (Note 2)
rr (Note 5)
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. The symbols represent characteristics of the clamp diode (Clamp-Di).
(Note 2)
(Note 5)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
Item
Item
j
) should not exceed T
V
V
T
Pulse
Pulse
T
RMS, sinusoidal, f = 60Hz, t = 1min.
V
T
V
I
V
I
I
V
V
V
I
I
V
R
Inductive load
V
R
Inductive load
V
R
Inductive load
I
I
V
di/dt = 2600A/ s, T
Inductive load
C
C
E
E
F
F
C
C
C
j
GE
CE
CC
CE
GE
CE
GE
CC
CC
G(on)
CC
G(off)
CC
G(on)
CC
= 125 C
= 800A, V
= 800A, V
= 800A, V
= 800A, V
= 80mA, V
= 800A, V
= 800A, V
= 100 C
= 25 C, IGBT part
jmax
= 0V, T
= V
= V
= 10V, f = 100kHz
= 0V, T
= 2200V, V
= 0V, T
= 1650V, I
= 1650V, I
= 1650V, I
= 1650V, I
= 1650V, I
= 2.5 , T
= 2.5 , T
= 2.5 , T
CES
GES
rating (150 C).
j
j
, V
j
, V
GE
GE
GE
GE
GE
GE
= 25 C
= 25 C
= 25 C
CE
GE
CE
C
C
C
C
C
= 0V, T
= 0V, T
= 0V, T
= 0V, T
CES
= 15V, T
= 15V, T
j
j
j
= 10V, T
= 800A, V
= 800A, V
= 800A, V
= 800A, V
= 800A, V
= 125 C, L
= 125 C, L
= 125 C, L
= 0V, T
= 0V, T
j
= 125 C, L
3300V, V
Conditions
Conditions
j
j
j
j
= 25 C
= 125 C
= 25 C
= 125 C
j
j
j
j
j
= 25 C
= 125 C
= 25 C
= 25 C
= 25 C
GE
GE
GE
GE
GE
s
s
s
= 100nH
= 100nH
= 100nH
= 15V, T
= 15V
= 15V
= 15V
= 15V
j
s
) does not exceed T
GE
= 100nH
= 15V
j
= 25 C
(Note 1)
(Note 1)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
(Note 4)
opmax
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
rating (125 C).
Min
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CM800E6C-66H
–40 ~ +150
–40 ~ +125
–40 ~ +125
Ratings
Limits
3300
1600
1600
9600
6000
3.30
3.60
12.0
2.80
2.70
1.10
1.05
0.60
2.80
2.70
0.60
800
800
Typ
120
540
540
10
—
—
—
—
—
—
—
—
6.0
3.6
5.7
20
INSULATED TYPE
Max
4.20
3.60
1.60
1.00
2.50
1.00
3.60
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
0.5
1.4
1.4
10
Jul. 2005
J/pulse
J/pulse
J/pulse
J/pulse
Unit
Unit
mA
nF
nF
nF
W
V
V
V
V
A
A
A
A
V
V
V
C
C
C
A
C
C
C
s
s
s
s
s
s
s