CM800E6C-66H Powerex Inc, CM800E6C-66H Datasheet - Page 4
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CM800E6C-66H
Manufacturer Part Number
CM800E6C-66H
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet
1.CM800E6C-66H.pdf
(7 pages)
Specifications of CM800E6C-66H
Voltage
3300V
Current
800A
Circuit Configuration
Chopper
Rohs Compliant
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM800E6C-66H
Manufacturer:
MIT
Quantity:
20 000
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1600
1400
1200
1000
800
600
400
200
0
6
5
4
3
2
1
0
0
0
T
V
j
GE
= 125 C
COLLECTOR-EMITTER SATURATION
COLLECTOR-EMITTER VOLTAGE ( V )
= 15V
1
VOLTAGE CHARACTERISTICS
OUTPUT CHARACTERISTICS
COLLECTOR CURRENT ( A )
400
V
V
GE
GE
2
= 20V
= 15V
( TYPICAL )
( TYPICAL )
800
3
4
1200
T
T
V
V
j
j
V
GE
GE
= 25 C
= 125 C
GE
5
= 10V
= 12V
= 8V
1600
6
1600
1400
1200
1000
800
600
400
200
0
6
5
4
3
2
1
0
0
0
V
CE
= 20V
TRANSFER CHARACTERISTICS
FORWARD CHARACTERISTICS
T
T
2
GATE-EMITTER VOLTAGE ( V )
j
j
= 25 C
= 125 C
400
EMITTER CURRENT ( A )
FREE-WHEEL DIODE
MITSUBISHI HVIGBT MODULES
4
HIGH POWER SWITCHING USE
( TYPICAL )
( TYPICAL )
800
6
CM800E6C-66H
8
1200
INSULATED TYPE
T
T
j
j
= 25 C
= 125 C
10
1600
12
Jul. 2005