IXGH56N60B3D1 IXYS, IXGH56N60B3D1 Datasheet - Page 6

• Manufacturer Part Number: IXGH56N60B3D1
• Description: Mid-Frequency Range (15khz-40khz), w/ Diode
• Manufacturer: IXYS

Specifications of IXGH56N60B3D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 350
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 56
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 95
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.20
• Rthjc, Max, Igbt, (°c/w): 0.375
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): 1.5
• Package Style: TO-247

IXYS reserves the right to change limits, test conditions and dimensions.
150
130
110
80
70
60
50
40
30
20
10
90
70
50
30
10
25
5
Fig. 20. Inductive Turn-on Switching Times
Fig. 18. Inductive Turn-on Switching Times
t
T
V
t
R
V
r
J
CE
r
G
CE
= 125ºC, V
35
= 5
= 480V
10
= 480V
Ω
, V
45
vs. Junction Temperature
15
t
t
GE
d(on
d(on)
GE
T
J
= 15V
55
vs. Gate Resistance
= 15V
- Degrees Centigrade
)
20
- - - -
- - - -
R
65
G
25
- Ohms
I
C
75
= 72A, 36A, 18A
30
85
I
35
I
I
I
C
C
C
C
95
= 36A, 18A
= 72A
= 36A
= 18A
40
105
45
115
125
50
90
80
70
60
50
40
30
20
34
32
30
28
26
24
22
20
75
65
55
45
35
25
15
15
Fig. 19. Inductive Turn-on Switching Times
20
t
R
V
r
CE
G
25
= 5
= 480V
Ω
30
, V
vs. Collector Current
t
d(on)
GE
35
I
= 15V
C
- Amperes
- - - -
40
IXGH56N60B3D1
45
T
50
J
= 25ºC, 125ºC
55
IXYS REF: G_56N60B3(65) 05-05-08-B
60
65
70
75
32
30
28
26
24
22
20